Electrochemical lithography memory system and method
Electronic memory devices fabricated using nanolithography techniques enables rapid and reliable storage of data on a substrate. One such device includes a memory access head, which includes a conductive member and an insulative member. The conductive member includes a proximal conductive tip, a distal conductive tip, and a body portion. The body portion is embedded in the insulative member. The device further includes a substrate adjacent to the distal conductive tip, an electrolyte disposed between the distal conductive tip and the substrate; and a microchip in communication with the proximal conductive tip.
1. A memory device comprising:
a memory access head comprising:
a conductive member comprising a proximal conductive tip, a distal conductive tip, and a body portion; and
an insulative member, the body portion being embedded in the insulative member;
a substrate adjacent to the distal conductive tip;
an electrolyte disposed between the distal conductive tip and the substrate; and
a microchip in communication with the proximal conductive tip.
2. The memory device of claim 1 further comprising a voltage source in communication with the substrate and the microchip.
3. The memory device of claim 2 further comprising a voltage controller in communication with the voltage source.
4. The memory device claim 1 further comprising a voltage-measuring device in communication with the substrate and the proximal conductive tip.
5. The memory device of claim 1 wherein the conductive member comprises an anode and the substrate comprises a cathode.
6. The memory device of claim 1 wherein the conductive member comprises a cathode and the substrate comprises an anode.
7. The memory device of claim 1 further comprising a position controller in communication with the memory access head.
8. The memory device of claim 1 wherein the microchip comprises at least one switch in communication with the proximal conductive tip.
9. The memory device of claim 1 wherein the microchip comprises a plurality of switches, each of the plurality of switches being in communication with one of the proximal conductive tips.
10. A memory device comprising:
an array of memory access heads, each memory access head comprising:
a conductive member comprising a proximal conductive tip, a distal conductive tip, and a body portion; and
an insulative member, the body portion being embedded in the insulative member;
a substrate adjacent to each of the distal conductive tips in the array of memory access heads;
an electrolyte disposed between the array of memory access head and the substrate; and
a microchip in communication with each of the proximal conductive tips in the array of memory access heads.
11. The memory device of claim 10 further comprising a voltage source in communication with the substrate and the microchip.
12. The memory device of claim 11 further comprising a voltage controller in communication with the voltage source.
13. The memory device claim 10 further comprising a voltage-measuring device in communication with the substrate and each of the proximal conductive tips in the array of memory access heads.
14. The memory device of claim 10 wherein each of the conductive members comprises an anode and the substrate comprises a cathode.
15. The memory device of claim 10 wherein each of the conductive members comprises a cathode and the substrate comprises an anode.
16. A method of writing data to a memory, comprising:
providing a memory device comprising:
a memory access head comprising:
a conductive member comprising a proximal conductive tip, a distal conductive tip, and a body portion; and
an insulative member, the body portion being embedded in the insulative member;
a substrate adjacent to the distal conductive tip; and
an electrolyte disposed between the distal conductive tip and the substrate; and
applying a voltage to the substrate and the proximal conductive tip thereby causing ionic transfer between the distal conductive tip and the substrate through the electrolyte and causing one of oxidation and reduction of a particular location on the substrate adjacent to the distal conductive tip.
17. The method of claim 16 wherein causing one of oxidation and reduction of a particular location on the substrate results in writing a digital one to the particular location on the substrate and the other one of oxidation and reduction of the particular location on the substrate results in erasing the digital one from the particular location on the substrate.
18. The method of claim 16 wherein causing one of oxidation and reduction of a particular location on the substrate results in writing a digital zero to the particular location on the substrate and the other one of oxidation and reduction of the particular location on the substrate results in erasing the digital zero from the particular location on the substrate.