Manufacturing method of semiconductor device
View Patent ↗This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.
1. A method of manufacturing a semiconductor device, comprising:
forming a first insulation film on a front surface of a semiconductor substrate;
forming an opening in the first insulation film by etching so as to expose part of the front surface of the semiconductor substrate;
forming a pad electrode that is disposed in the opening and on the first insulation film;
forming a second insulation film on a back surface of the semiconductor substrate;
forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the pad electrode disposed in the opening of the first insulation film and part of the first insulation film surrounding said part of the pad electrode disposed in the opening of the first insulation film;
forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
etching the third insulation film so as to expose the part of the pad electrode disposed in the opening of the first insulation film;
forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode; and
dividing the semiconductor substrate to form at least a semiconductor die.
2. The method of claim 1 , further comprising forming a wiring on the back surface of the semiconductor substrate so that the wiring is connected with the through-hole electrode.
3. The method of claim 2 , further comprising forming a conductive terminal on the wiring.
4. A method of manufacturing a semiconductor device, comprising:
forming a first insulation film on a front surface of a semiconductor substrate;
removing part of the first insulation film by etching;
forming a pad electrode on the first insulation film so as to fill the part of the first
insulation film removed by the etching;
forming a second insulation film on a back surface of the semiconductor substrate;
forming a via hole above part of the pad electrode filling the removed part of the first insulation film, a lateral size of the via hole being larger than a lateral size of the removed part of the first insulation film;
forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
removing the third insulation film at the bottom of the via hole;
forming a through-hole electrode in the via hole so that the through-hole electrode is electrically connected with the pad electrode; and
dividing the semiconductor substrate to form at least a semiconductor die.
5. A method of manufacturing a semiconductor device, comprising: forming a first insulation film on a front surface of a semiconductor substrate; forming an opening in the first insulation film by etching so as to expose part of the front surface of the semiconductor substrate; forming a barrier metal layer that is disposed in the opening and on the first insulation film; forming a pad electrode on the barrier metal layer; forming a second insulation film on a back surface of the semiconductor substrate; forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the barrier metal layer disposed in the opening of the first insulation film and part of the first insulation film surrounding said part of the barrier metal layer disposed in the opening of the first insulation film; forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film; etching the third insulation film so as to expose the part of the barrier metal layer disposed in the opening of the first insulation film; forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode through the barrier metal layer; and dividing the semiconductor substrate to form at least a semiconductor die.
6. The method of claim 5 , further comprising forming a wiring on the back surface of the semiconductor substrate so that the wiring is connected with the through-hole electrode.
7. The method of claim 6 , further comprising forming a conductive terminal on the wiring.
8. A method of manufacturing a semiconductor device, comprising: forming a first insulation film on a from surface of a semiconductor substrate; forming a recess in the first insulation film by etching; forming a pad electrode that is disposed in the recess and on the first insulation film; forming a second insulation film on a back surface of the semiconductor substrate; forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the first insulation film that is underneath the recess and part of the first insulation film surrounding said part of the first insulation film underneath the recess; forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film; etching the third insulation film and the first insulation film so as to expose the part of the pad electrode disposed in the recess; forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode; and dividing the semiconductor substrate to form at least a semiconductor die.
9. The method of claim 8 , further comprising forming a wiring on the back surface of the semiconductor substrate so that the wiring is connected with the through-hole electrode.
10. The method of claim 9 , further comprising forming a conductive terminal on the wiring.
11. A method of manufacturing a semiconductor device, comprising: forming a device element on a front surface of a semiconductor substrate; forming a first insulation film on the front surface of a semiconductor substrate so as to cover the device element; forming an opening in the first insulation film by etching so as to expose part of the device element; forming a pad electrode that is disposed in the opening and on the first insulation film; forming a second insulation film on a back surface of the semiconductor substrate; forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the device element that is larger than the opening of the first insulation film; forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film; etching the third insulation film and the device element so as to expose part of the pad electrode disposed in the opening of the first insulation film; forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode; and dividing the semiconductor substrate to form at least a semiconductor die.
12. The method of claim 11 , further comprising forming a wiring on the back surface of the semiconductor substrate so that the wiring is connected with the through-hole electrode.
13. The method of claim 12 , further comprising forming a conductive terminal on the wiring.
14. The method of claim 11 , wherein the device element is a gate oxide film, a gate electrode or a device isolation layer.