Resin-encapsulated semiconductor apparatus and process for its fabrication
View Patent ↗The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.
1. A resin-encapsulated semiconductor apparatus comprising:
a semiconductor device having a transistor and a capacitor;
a surface-protective polyirnide film and an encapsulant resin member for encapsulating the semiconductor device;
said transistor is farmed on a semiconductor substrate, said capacitor laminating a tower electrode layer, a ferroelectric film and an upper electrode layer in order is located on said transistor, and said surface-protective polyimide film is formed over said semiconductor device including a conductor layer consisting of an insulation layer and a metal wiring layer located on said capacitor;
wherein said surface-protective polyimide film is a thermosetting polyimide having a glass transition temperature in the range of 240° and 400° C.
2. The resin-encapsulated semiconductor apparatus according to claim 1 , wherein said ferroelectric film is a dielectric material having a Perovskite crystalline structure.
3. The resin-encapsulated semiconductor apparatus according to claim 1 , wherein said semiconductor device is a Dynamic Random Access Memory.
4. The resin-encapsulated semiconductor apparatus according to claim 1 , wherein said encapsulant resin member contains a silica-containing epoxy resin.
5. The resin-encapsulated semiconductor apparatus according to claim 1 , wherein said surface-protective polyimide film covers a surface of said semiconductor device except for a bonding pad portion connected to an external electronic circuit.
6. resin-encapsulated semiconductor apparatus according to claim 1 , wherein one of metal wiring layer is in contact with said lower electrode layer and another is in contact with said upper electrode layer.
7. The resin-encapsulated semiconductor apparatus according to claim 1 , wherein said surface-protective polyimide film has further a Young's modulus in the range of 2,600 MPa to 6 GPa.
8. A resin-encapsulated semiconductor apparatus comprising;
a semiconductor device having a transistor and a capacitor;
a surface-protective palyimide film and an encapsulant resin member for encapsulating the semiconductor device;
said transistor is formed on a semiconductor substrate, said capacitor laminating a lower electrode layer, a ferroelectric film and an upper electrode layer in order is located on said transistor, and said surface-protective polyimide film is fanned over said semiconductor device including a conductor layer consisting of an insulation layer and a metal wiring layer located on said capacitor,
wherein said surface-protective polyimide film is a thermosetting polyimide having a Young's modulus in the range of 2,600 MPa to 6 Gpa.
9. A resin-encapsulated semiconductor apparatus comprising:
a semiconductor device having a transistor and a capacitor;
a surface-protective polyiniide film and an encapsulant resin member for encapsulating the semiconductor device;
said capacitor laminating a lower electrode layer, a ferroelectric film and an upper electrode layer in order is located on said transistor formed on a semiconductor substrate through an interlaying insulation layer, said surface-protective polyimide film is formed over said semiconductor device including a conductor layer consisting of an insulation layer and a metal wiring layer located on said capacitor, and a bonding pact portion formed on said metal wiring layer and a lead frame are connected with bonding wire through an opening formed in said surface-protective polyimide film;
wherein said surface-protective polyimide film is a thermoseuing polyimide having a glass transition temperature from 240° C. to 400° C. and a Young's modulus of from 2600 MPa to 6 GPa.