Semiconductor chip having gettering layer, and method for manufacturing the same
View Patent ↗In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
1. A semiconductor device comprising:
a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip;
a package substrate which faces the back face; and
a resin covering the semiconductor chip and the package substrate,
wherein a thickness of said semiconductor chip is 100 μm or less,
wherein said gettering layer is a damaged layer,
wherein the damaged layer includes a plurality of grooves,
wherein a depth of each of said grooves is 2 to 3 μm, and
wherein in plan view to said semiconductor chip, each of said grooves is a linear groove.
2. A semiconductor device comprising:
a semiconductor chip which includes an element layer formed on a front face of the semiconductor chip and a gettering layer on a back face of the semiconductor chip;
a substrate which faces the back face;
a wire; and
a resin covering the semiconductor chip, the wire and the package substrate,
wherein a thickness of said semiconductor chip is 100 μm or less,
wherein said gettering layer is a damaged layer,
wherein the damaged layer includes a plurality of grooves,
wherein a depth of each of said grooves is 2 to 3 μm, and
wherein in plan view to said semiconductor chip, each of said grooves is a linear groove, and
wherein the wire electrically connects between the substrate and the semiconductor chip.