Method for manufacturing semiconductor device and semiconductor device
View Patent ↗A semiconductor device includes: a connecting body including a connecting electrode; and at least one semiconductor chip stacked on the connecting body, the semiconductor chip including: a substrate; and a trans-substrate conductive plug that penetrates the substrate, the trans-substrate conductive plug having a first terminal that is provided on an active surface side of the substrate; and a second terminal that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal being formed larger than an outer shape of the second terminal, wherein the second terminal of the semiconductor chip is electrically connected to a connecting electrode of the connecting body via a brazing material.
1. A method for manufacturing a semiconductor device comprising:
providing a connecting body including:
a connecting electrode; and
at least one semiconductor chip stacked on the connecting body, the semiconductor chip including:
a substrate; and
a trans-substrate conductive plug that penetrates the substrate, the trans-substrate conductive plug having:
a first terminal that is provided on an active surface side of the substrate; and
a second terminal that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal being formed larger than an outer shape of the second terminal;
providing a brazing material on the connecting electrode of the connecting body;
stacking the semiconductor chip on the connecting body with the second terminal of the semiconductor chip being placed against the connecting electrode of the connecting body; and
electrically connecting the connecting electrode and the second terminal via the brazing material by applying heat and pressure directly from a first terminal side to the first terminal.
2. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the connecting body is another semiconductor chip having the same structure as the semiconductor chip, and the brazing material is provided on a first terminal of the another semiconductor chip that serves as the connecting body, the method further comprising:
placing the first terminal of the another semiconductor chip and the second terminal of the semiconductor chip that is stacked on top of the another semiconductor chip against each other; and
electrically connecting the first terminal of the another semiconductor chip and the second terminal of the semiconductor chip via the brazing material.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein at least one second semiconductor chip is stacked on top of the semiconductor chip, and the brazing material is provided on a first terminal of the semiconductor chip that is provided as a bottom layer, the method further comprising:
placing the first terminal of the semiconductor chip and a second terminal of the second semiconductor chip that is stacked on top of the semiconductor chip against each other, and
electrically connecting the first terminal of the semiconductor chip and the second terminal of the second semiconductor chip via the brazing material.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein heat and pressure are applied to each of the at least one second semiconductor chip so as to bond the semiconductor chips.
5. The method for manufacturing a semiconductor device according to claim 3 , wherein heat and pressure are applied to the semiconductor chips as a single body so as to bond the semiconductor chips.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the connecting body is a wafer level chip scale package processed substrate.