Semiconductor device and writing method
View Patent ↗A semiconductor device has a memory cell array including a multi-level memory cell having multiple and different threshold values, a first latch circuit latching information of multiple-word of input information, a second latch circuit latching write information in which the information of the multiple-word of the input information is converted into information according to each level of the multi-level memory cell, a write circuit writing information into the multi-level memory cell on a group basis corresponding to the number of memory cells simultaneously programmable, according to the write information, and a control circuit controlling programming the memory cell array. The information is simultaneously programmed on the group basis into which multiple-word input information is divided, and makes it possible to shorten a program period substantially on a word basis. The program period is not increased, even if programming and verification are repeated several times in programming the multi-level memory cell.
1. A semiconductor device comprising:
a first latch circuit that latches write information of multiple words, into which multiple-word input information is changed based on levels of a multi-level memory cell; and
a write circuit that writes the write information of multiple words on a group basis in which one group is associated with a plurality of memory cells that are simultaneously programmable.
2. The semiconductor device as claimed in claim 1 , further comprising a second latch circuit that changes the multiple-word input information to the write information of multiple words and transfers the write information thus obtained to the first latch circuit.
3. The semiconductor device as claimed in claim 1 , wherein the first latch circuit transfers the write information to the write circuit on the group basis.
4. The semiconductor device as claimed in claim 2 , wherein the first latch circuit comprises circuits that are equal in number to circuits that form the second latch circuit and are greater in number than circuits that form the write circuit.
5. The semiconductor device as claimed in claim 1 , further comprising a control circuit that generates a signal that instructs verification and programming on the group basis.
6. The semiconductor device as claimed in claim 1 , further comprising a control circuit that generates a signal for repetitive verification and programming on a multiple-group basis.
7. The semiconductor device as claimed in claim 5 , further comprising a determination circuit that determines whether verification for a group passes, wherein the control circuit finishes verification and programming for a group for which the verification has passed.
8. The semiconductor device as claimed in claim 1 , further comprising a control circuit that generates a signal that passes on verification for a word that is not selected in a group.
9. The semiconductor device as claimed in claim 1 , further comprising a control circuit, wherein when the memory cell is sufficiently programmed at a first level, the control circuit generates a signal that instructs the memory cell to be programmed at a second level.
10. The semiconductor device as claimed in claim 1 , wherein the semiconductor device is a semiconductor memory device.
11. A method comprising the steps of:
changing multiple-word input information to write information of words based on levels of a multi-level memory cell; and
writing the write information of multiple words on a group basis in which one group has associated therewith a number of memory cells that are simultaneously programmable.
12. The method as claimed in claim 11 , further comprising a step of repetitively performing verification and programming on the group basis.
13. The method as claimed in claim 11 , further comprising a step of repetitively performing verification on a multiple-group basis.
14. The method as claimed in claim 11 , further comprising the steps of:
determining whether verification for a group passes; and
finishing verification and programming for the group for which verification has passed.
15. The method as claimed in claim 11 , further comprising a step of passing on verification for a word that is not selected in a group.
16. The method as claimed in claim 11 , further comprising a step of, when the memory cell is sufficiently programmed at a first level, generating a signal that instructs the memory cell to be programmed at a second level.