Granted Patent B2

US 7,273,798 · App. 11/194,237 · Granted Sep 25, 2007

Abstract

Claims (18)

1. A method of forming a gallium nitride device substrate, comprising:

providing a first sacrificial substrate;

forming a layer of gallium nitride over the first sacrificial substrate;

forming a first layer of gallium nitride containing an additional lattice parameter altering element over the layer of gallium nitride, the additional lattice parameter altering element causing the first layer of gallium nitride containing the lattice parameter altering element to grow strained so that a lattice parameter of the first layer of gallium nitride containing the lattice parameter altering element conforms to a lattice parameter of the layer of gallium nitride;

attaching a substitute substrate to the first layer of gallium nitride containing an additional lattice parameter altering element; and

removing the sacrificial substrate and the layer of gallium nitride, causing the lattice parameter of the first layer of gallium nitride containing the lattice parameter altering element to relax, and revealing the first layer of gallium nitride containing the lattice parameter altering element.

2. The method of claim 1 , in which the additional lattice parameter altering element is chosen from aluminum and indium.

3. The method of claim 2 , in which the first layer of gallium nitride containing an additional lattice parameter altering element has a composition of In x Ga 1-x N, where 0≦x≦1.

4. The method of claim 3 , in which the first layer of gallium nitride containing an additional lattice parameter altering element has a composition of In 0.1 Ga 0.9 N.

5. The method of claim 2 , in which the first layer of gallium nitride containing an additional lattice parameter altering element has a composition of Al x Ga 1-x N, where 0≦x≦1.

6. The method of claim 5 , in which the first layer of gallium nitride containing an additional lattice parameter altering element has a composition of Al 0.1 Ga 0.9 N.

7. The method of claim 2 , further comprising:

forming a second layer of gallium nitride containing the additional lattice parameter altering element over the first layer of gallium nitride containing the additional lattice parameter altering element;

attaching an additional substitute substrate to the second layer of gallium nitride containing the additional lattice parameter altering element; and

removing the substitute substrate and the first layer of gallium nitride containing the additional lattice parameter altering element.

8. The method of claim 7 , in which the additional lattice parameter altering element is indium.

9. The method of claim 8 , in which the second and subsequent layers of gallium nitride containing an additional lattice parameter altering element have a composition of In x Ga 1-x N, where 0≦x23 1.

10. The method of claim 9 , in which the second layer of gallium nitride containing an additional lattice parameter altering element has a composition of In 0.2 Ga 0.8 N.

Assignments (8)