Semiconductor integrated circuit device

1. A semiconductor integrated circuit device, comprising:

a main region on which a main circuit is formed; and

a spare cell region for logic modification of the circuit formed on the main region,

said spare cell region including a P-channel transistor region, an N-channel transistor region, a plurality of gate electrodes provided above the P-channel transistor region and the N-channel transistor region, a main wire layer that is a different layer from the gate electrodes, and a plurality of bypass wires that are formed at a different layer from the main wire layer,

each of said plurality of bypass wires having a structure that can be connected to the main wire layer at more than one point through contact holes formed in a dielectric layer intervening between the main wire layer and the bypass wires.

2. The semiconductor integrated circuit device as claimed in claim 1 , wherein said main wire layer includes a portion that intersects with the bypass wires.

3. The semiconductor integrated circuit device as claimed in claim 1 , wherein said bypass wires are formed at a layer different from the gate electrodes.

4. The semiconductor integrated circuit device as claimed in claim 3 , wherein said main wire layer is a layer above the layer at which the bypass wires are formed.

5. The semiconductor integrated circuit device as claimed in claim 1 , wherein a diffusion region that is included in the P-channel transistor region and a diffusion region that is included in the N-channel transistor region are connected to the main wire layer.

6. The semiconductor integrated circuit device as claimed in claim 5 , wherein portions of the main wire layer connected to the diffusion regions are spaced so that a wire of the main wire layer used for wiring can pass.

7. The semiconductor integrated circuit device as claimed in claim 1 , wherein all gate electrodes are connected to the main wire layer.

8. The semiconductor integrated circuit device as claimed in claim 7 , wherein portions of the main wire layer connected to the gate electrodes are spaced so that a wire of the main wire layer used for wiring can pass.

9. The semiconductor integrated circuit device as claimed in claim 1 , wherein said bypass wires are provided in parallel with the gate electrodes.

10. The semiconductor integrated circuit device as claimed in claim 1 , wherein said plurality of bypass wires have a structure that can be connected to the main wire layer at more than two point through contact holes formed in the dielectric layer.

11. The semiconductor integrated circuit device as claimed in claim 1 , wherein said spare cell region includes a plurality of P-channel transistor regions and plurality of N-channel transistor regions,

the gate electrodes for the P-channel transistor regions being provided with respect to the plurality of P-channel transistor regions in common, and the gate electrodes for the N-channel transistor regions being provided with respect to the plurality of N-channel transistor regions in common.

12. The semiconductor integrated circuit device as claimed in claim 11 , wherein at least two P-channel transistor regions have a different channel width from each other, and at least two N-channel transistor regions have a different channel width from each other.

13. A semiconductor integrated circuit device, comprising:

a plurality of P-channel transistor regions whose channel widths are different from each other;

a plurality of N-channel transistor regions whose channel widths are different from each other;

a plurality of gate electrodes for P-channel transistors located across the P-channel transistor regions;

a plurality of gate electrodes for N-channel transistors located across the N-channel transistor regions;

a plurality of bypass wires located between the P-channel transistor regions and the N-channel transistor regions; and

a main wire layer formed at a different layer from that on which the bypass wires are formed,

each of said plurality of bypass wires having a structure that can be connected to the main wire layer at more than one point.

14. The semiconductor integrated circuit device as claimed in claim 13 , wherein said plurality of P-channel transistor regions include at least three P-channel transistor regions whose channel widths are different from each other, said plurality of N-channel transistor regions include at least three N-channel transistor regions whose channel widths are different from each other.

15. The semiconductor integrated circuit device as claimed in claim 13 , wherein said plurality of gate electrodes for P-channel transistors are located in parallel with a substantially constant pitch, said plurality of gate electrodes for N-channel transistors are located in parallel with a substantially constant pitch, and said plurality of bypass wires are located in parallel with the gate electrodes with substantially the same pitch as the gate electrodes.

16. The semiconductor integrated circuit device as claimed in claim 13 , wherein diffusion regions that are included in the P-channel transistor regions, other diffusion regions that are included in the N-channel transistor region, said plurality of gate electrodes for P-channel transistors, and said plurality of gate electrodes for N-channel transistors have a structure that can be connected to the main wire layer.

17. The semiconductor integrated circuit device as claimed in claim 13 , wherein each of said plurality of bypass wires have a structure that can be connected to the main wire layer at more than two points.

18. A semiconductor integrated circuit device, comprising:

a P-channel transistor region;

an N-channel transistor region;

a plurality of gate electrodes for P-channel transistors formed on the P-channel transistor region arranged in parallel with a predetermined constant pitch;

a plurality of gate electrodes for N-channel transistors formed on the N-channel transistor region arranged in parallel with said predetermined constant pitch;

a plurality of bypass wires located between the P-channel transistor region and the N-channel transistor region arranged in parallel with said predetermined constant pitch; and

a main wire layer formed at a different layer from that on which the bypass wires are formed,

each of said plurality of bypass wires having a structure that can be connected to the main wire layer at more than one point.

19. The semiconductor integrated circuit device as claimed in claim 18 , wherein portions of the main wire layer connected to diffusion regions that is included in the P-channel transistor region are spaced so that a wire of the main wire layer used for wiring can pass, and other portions of the main wire layer connected to diffusion regions that is included in the N-channel transistor region are spaced so that a wire of the main wire layer used for wiring can pass.

20. The semiconductor integrated circuit device as claimed in claim 18 , wherein portions of the main wire layer connected to the gate electrodes for P-channel transistors are spaced so that a wire of the main wire layer used for wiring can pass, and portions of the main wire layer connected to the gate electrodes for N-channel transistors are spaced so that a wire of the main wire layer used for wiring can pass.