Resist material and pattern formation method
View Patent ↗A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
1. A resist material comprising:
a first polymer in which hydrogen atoms of alkali-soluble groups are replaced with an acid labile group stable to water and labilized by an acid;
a second polymer in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group; and
an acid generator.
2. A resist material comprising:
a polymer in which hydrogen atoms of alkali-soluble groups are replaced with an acid labile group stable to water and labilized by an acid;
a compound in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group; and
an acid generator.
3. A resist material comprising:
a first polymer;
a compound in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid labile group stable to water and labilized by an acid;
a second polymer in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group and which is different from the first polymer; and
an acid generator.
4. The resist material of claim 1 ,
wherein said acid stable group is a methyl group, an ethyl group, an isopropyl group, an adamantyl group or an isobornyl group.
5. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure,
wherein said resist film is made of a resist material including:
a first polymer in which hydrogen atoms of alkali-soluble groups are replaced with an acid labile group stable to water and labilized by an acid;
a second polymer in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group; and
an acid generator.
6. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure,
wherein said resist film is made of a resist material including:
a polymer in which hydrogen atoms of alkali-soluble groups are replaced with an acid labile group stable to water and labilized by an acid;
a compound in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group; and
an acid generator.
7. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with a liquid provided on said resist film; and
forming a resist pattern by developing said resist film after the pattern exposure,
wherein said resist film is made of a resist material including:
a first polymer;
a compound in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid labile group stable to water and labilized by an acid;
a second polymer in which at least one hydrogen atom of an alkali-soluble group is replaced with an acid stable group and which is different from the first polymer; and
an acid generator.
8. The resist material of claim 2 ,
wherein said acid stable group is a methyl group, an ethyl group, an isopropyl group, an adamantyl group or an isobornyl group.
9. The resist material of claim 3 ,
wherein said acid stable group is a methyl group, an ethyl group, an isopropyl group, an adamantyl group or an isobornyl group.
10. The pattern formation method of claim 6 ,
wherein said acid stable group is a methyl group, an ethyl group, an isopropyl group, an adamantyl group or an isobornyl group.
11. The pattern formation method of claim 7 ,
wherein said acid stable group is a methyl group, an ethyl group, an isopropyl group, an adamantyl group or an isobornyl group.