Semiconductor device
View Patent ↗Propagation of a crack in a semiconductor device is to be suppressed, thus to protect an element forming region. An interface reinforcing film is provided so as to cover a sidewall of a concave portion that penetrates a SiCN film and a SiOC film formed on a silicon substrate. The interface reinforcing film is integrally and continuously formed with another SiOC film, and includes an air gap.
1. A semiconductor device comprising:
a semiconductor substrate that includes a region in which an element is provided and a peripheral region surrounding a periphery of said region in which said element is provided;
a first metal interconnect formed in a first metal layer;
a second metal interconnect formed in a second metal layer;
a plug connecting said first metal interconnect and said second metal interconnect, the plug being formed in a plug layer including a first insulating film and a second insulating film having a lower film density than said first insulating film;
a concave portion penetrating said first insulating film and said second insulating film; and
an interface reinforcing film including silicon and oxygen formed in said concave portion, said interface reinforcing film being disposed in said peripheral region.
2. The semiconductor device according to claim 1 , wherein said second insulating film is constituted of a low dielectric constant film.
3. The semiconductor device according to claim 1 , wherein said first insulating film is constituted of one of a SiC film, a SiCN film, a SiN film or a SiON film, and said second insulating film is constituted of one selected from the group consisting of a SiOC film, a hydrogen polysiloxane film, a methyl polysiloxane film, and a methyl hydrogen polysiloxane film.
4. The semiconductor device according to claim 1 , wherein said semiconductor substrate includes a first region in which an element is provided and a second region, and said interface reinforcing film is disposed along a boundary between said first region and said second region.
5. The semiconductor device according to claim 1 , further comprising a guard ring located in said peripheral region so as to surround said region in which said element is provided;
wherein said interface reinforcing film is disposed so as to surround an outer periphery of said guard ring.
6. The semiconductor device according to claim 1 , wherein said interface reinforcing film is formed in a stripe pattern.
7. The semiconductor device according to claim 1 , wherein said interface reinforcing film is located close to a dicing section of the semiconductor substrate.
8. The semiconductor device according to claim 1 , wherein said concave portion has a depth greater than a width thereof, thereby securing room for disposing said air gap.
9. The semiconductor device according to claim 1 , wherein said interface reinforcing film inhibits crack propagation.
10. The semiconductor device according to claim 1 , wherein said concave portion is penetrating said first insulating film, said second insulating film and said first metal layer.
11. The semiconductor device according to claim 1 , wherein said concave portion is partially buried by said interface reinforcing film so as to have an air gap.
12. The semiconductor device according to claim 11 , wherein said interface reinforcing film and air gap inhibits crack propagation.
13. The semiconductor device according to claim 1 , wherein said concave portion is fully buried by said interface reinforcing film.
14. The semiconductor device according to claim 1 , wherein said interface reinforcing film is an SiOC film.
15. The semiconductor device according to claim 1 , wherein said concave portion is spaced apart from said plug.
16. A semiconductor device comprising:
a semiconductor substrate that includes a region in which an element is provided and a peripheral region surrounding a periphery of said region in which said element is provided;
a first metal interconnect formed in a first metal layer;
a second metal interconnect formed in a second metal layer;
a plug connecting said first metal interconnect and said second metal interconnect, the plug being formed in a plug layer including a first insulating film and a second insulating film having a lower film density than said first insulating film;
a concave portion penetrating said first insulating film and said second insulating film;
an interface reinforcing film including silicon and oxygen formed in said concave portion, said interface reinforcing film being disposed in said peripheral region; and
a guard ring located in said peripheral region so as to surround said region in which said element is provided,
wherein said interface reinforcing film is disposed so as to surround an outer periphery of said guard ring.