Pattern formation method through liquid immersion lithography
View Patent ↗An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation.
1. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with an immersion liquid provided on said resist film;
blowing air against said resist film after the pattern exposure;
discharging the air to the outside of a chamber; and
forming a resist pattern by developing said resist film after blowing air against said resist film.
2. The pattern formation method of claim 1 ,
wherein said air is warm air.
3. The pattern formation method of claim 1 ,
wherein said immersion liquid is water or perfluoropolyether.
4. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or A 2 laser.
5. The pattern formation method of claim 1 ,
wherein the step of performing pattern exposure includes the sub-step of filling said immersion liquid between said resist film and said projection lens.
6. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with an immersion liquid provided on said resist film;
dehumidifying an atmosphere around said resist film after the pattern exposure; and
forming a resist pattern by developing said resist film after dehumidification.
7. The pattern formation method of claim 6 ,
wherein the atmosphere is dehumidified by using a refrigerant.
8. The pattern formation method of claim 6 ,
wherein the atmosphere is dehumidified by using a drying agent.
9. The pattern formation method of claim 6 ,
wherein said immersion liquid is water or perfluoropolyether.
10. The pattern formation method of claim 6 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
11. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
performing pattern exposure by selectively irradiating said resist film with exposing light with an immersion liquid provided on said resist film;
warming said resist film in a warming vessel after the pattern exposure; and
forming a resist pattern by developing said resist film after warming said resist film.
12. The pattern formation method of claim 11 ,
wherein said resist film is warmed by warming an atmosphere around said resist film.
13. The pattern formation method of claim 11 ,
wherein said immersion liquid is water or perfluoropolyether.
14. The pattern formation method of claim 11 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.