IP Library Granted Patent US 7,189,982
Granted Patent B2
US 7,189,982 · App. 11/205,086 · Granted Mar 13, 2007

Focused ion beam apparatus and aperture

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Quick Facts
Patent No.
US 7,189,982
App. No.
11/205,086
Granted
Mar 13, 2007
Kind
B2
Abstract

In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Claims (15)

1. A focused ion beam apparatus using a liquid metal ion source, comprising an aperture for limiting the diameter of an ion beam,

said aperture including:

a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which said ion beam passes; and

a liquid metal carried on said recess, said liquid metal being used for said liquid metal ion source.

2. A focused ion beam apparatus according to claim 1 , wherein said aperture hole is tapered on the side opposite to said liquid metal ion source so that an aperture hole diameter may increase as it departs from said liquid metal ion source on the side opposite thereto.

3. A focused ion beam apparatus according to claim 1 , wherein said vessel formed with a recess having, at its surface lowermost point, an aperture hole through which said ion beam passes has, at its portion in contact with said liquid metal, irregularities of a maximum roughness of 1 to 10 μm.

4. A focused ion beam apparatus according to claim 1 , wherein said recess is narrower than a maximum ion beam irradiation range on said aperture on which an ion beam emitted from said liquid metal ion source is irradiated.

5. A focused ion beam apparatus according to claim 1 , wherein said aperture further includes, on its side facing said liquid metal ion source, a cover having a hole through which said ion beam passes and adapted to shield said aperture recess.

6. A focused ion beam apparatus according to claim 5 , wherein said cover has a trough structure for facilitating return of the liquid metal to said recess.

7. A focused ion beam apparatus according to claim 1 , wherein said aperture is a current limiting aperture disposed immediately beneath said liquid metal ion source.

8. A focused ion beam apparatus according to claim 7 , wherein the liquid metal carried on said aperture has a volume ranging from 5 mm 3 to 17 mm 3 .

9. A focused ion beam apparatus according to claim 1 , wherein said liquid metal is gallium.

10. An aperture for limiting an ion beam diameter in a focused ion beam apparatus using a liquid metal ion source, comprising:

a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which said ion beam passes; and

a liquid metal carried on said recess, said liquid metal being used for said liquid metal ion source.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2005
From: MADOKORO, YUICHI; IZAWA, SHIGERU; UMEMURA, KAORU; KAGA, HIROYASU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 016901/0862 →