Apparatus for ion implantation
View Patent ↗Apparatus for ion implantation having an ion trap for stabilizing a beam current are disclosed. An illustrated apparatus for ion implantation includes an arc chamber to ionize an impurity to create an ion beam; an ion beam trapping device to extract the ion beam from the arc chamber and to temporarily trap the extracted ion beam; an ion beam extracting and accelerating electrode to extract and accelerate the trapped ion beam of the ion beam trapping device; and an end station to hold a wafer in which the impurity is to be implanted.
1. An apparatus for ion implantation comprising:
an arc chamber to ionize an impurity to create an ion beam;
an ion beam trapping device to extract the ion beam from the arc chamber and to temporarily trap the extracted ion beam comprises:
an ion beam extracting electrode to extract the ion beam created by the arc chamber; and
a trap electrode to temporarily trap the ion beam extracted by the ion beam extracting electrode wherein an exit portion of the trap electrode disposed toward the ion beam extracting and accelerating electrode is formed narrower than an entrance portion of the trap electrode disposed toward the ion beam extracting electrode;
an ion beam extracting and accelerating electrode to extract and accelerate the trapped ion beam of the ion beam trapping device; and
an end station to hold a wafer in which the impurity is to be implanted.