CMP wafer contamination reduced by insitu clean
View Patent ↗Reducing CMP wafer contamination by in-situ clean is disclosed herein. The invention can be employed in a method in which a conductive layer is formed on a surface of a semiconductor wafer. After a portion of the conductive layer is removed, an acidic solution is directly or indirectly applied to the semiconductor wafer. Then the semiconductor wafer is engaged with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer. In one embodiment, the portion of the conductive layer is removed by a CMP tool, and the semiconductor wafer is engaged with the polishing pad before the semiconductor is removed from the CMP tool.
1. A method comprising:
forming a conductive layer on a surface of a semiconductor wafer;
mounting the semiconductor wafer on a wafer carrier of a chemical mechanical polisher (CMP) tool after formation of the conductive layer;
removing a portion of the conductive layer while the semiconductor wafer is mounted on the wafer carrier, wherein the act of removing the portion of the conductive layer comprises applying a slurry directly or indirectly to the semiconductor wafer;
rotating the semiconductor wafer after removal of the portion of the semiconductor layer, wherein the semiconductor wafer is rotated while it is mounted on the wafer carrier;
applying an acidic solution directly or indirectly to the semiconductor wafer while it is rotating and while the semiconductor wafer is mounted on the wafer carrier;
wherein the slurry and the acidic solution are contained in separate containers before they are applied to the semiconductor wafer;
engaging the semiconductor wafer with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer, wherein the semiconductor wafer is engaged with the polishing pad while the semiconductor is mounted on the wafer carrier.
2. The method of claim 1 further comprising rinsing the semiconductor wafer with deionized water after removing the portion of the conductive layer and before applying the acidic solution.
3. The method of claim 1 further comprising applying deionized water directly or indirectly to the semiconductor wafer while it is rotating and while applying the acidic solution.
4. The method of claim 1 wherein the acidic solution comprises an organic acidic solution.
5. The method of claim 1 wherein the conductive layer is formed on a dielectric surface of the semiconductor wafer.
6. A method comprising:
forming a conductive layer on a surface of a semiconductor wafer;
removing a portion of the conductive layer, wherein the act of removing the portion of the conductive layer comprises applying a slurry directly or indirectly to the semiconductor wafer;
applying an acidic solution directly or indirectly to the semiconductor wafer after removing the portion of the conductive layer;
wherein the slurry and the acidic solution are contained in separate containers before the are a lied to the semiconductor wafer;
engaging the semiconductor wafer with a polishing pad as the acidic solution is applied directly or indirectly to the semiconductor wafer.
7. The method of claim 6 further comprising:
mounting the semiconductor wafer on a wafer carrier of a chemical mechanical polisher (CMP) tool after formation of the conductive layer, wherein the CMP tool comprises the polishing pad;
wherein the conductive layer is removed while the semiconductor wafer is mounted on the wafer carrier;
wherein the polishing pad engages the semiconductor wafer while the semiconductor wafer is mounted on the wafer carrier.
8. The method of claim 7 further comprising:
rotating the semiconductor wafer relative to the polishing pad while the polishing pad engages the semiconductor wafer;
wherein the acidic solution is applied directly or indirectly to the semiconductor wafer while the polishing pad engages the semiconductor wafer and while the semiconductor wafer is rotating.
9. The method of claim 6 wherein the semiconductor wafer is engaged with the polishing pad of a CMP while the acidic solution is applied directly or indirectly to the semiconductor wafer.
10. The method of claim 6 further comprising rinsing the semiconductor wafer with water after removing the portion of the conductive layer and before applying the acidic solution.
11. The method of claim 10 further comprising rinsing the polishing pad with water after removing the portion of the conductive layer and before applying the acidic solution.
12. The method of claim 6 further comprising applying water directly or indirectly to the semiconductor wafer while the polishing pad engages the semiconductor wafer and while applying the acidic solution to the semiconductor wafer.
13. The method of claim 6 wherein the acidic solution comprises an organic acidic solution.