Temperature detection circuit
View Patent ↗A temperature detection circuit according to the present invention includes a potential generating part and a temperature detection part. The potential generating part generates a potential according to an environmental temperature, and the temperature detection part detects a temperature based on a detection potential generated in the potential generated part. The temperature detection part is a resistive load type inverter circuit that outputs a detection signal when the generated potential reaches a threshold voltage. The potential generating part applies the detection potential to the inverter circuit through a temperature sensor including cascaded diodes and an NchMOSFET. The threshold voltage of the inverter circuit is determined based on the NchMOSFET in the inverter circuit, and the NchMOSFET is a MOSFET having the same characteristic as the NchMOSFET of the potential generating part.
1. A temperature detection circuit, comprising:
a potential generating part generating a potential corresponding to a detection temperature; and
a temperature detection part detecting a temperature based on a generated potential in the potential generating part,
wherein the temperature detection part is an inverter circuit that includes a first semiconductor device that is switched by the generated potential,
wherein the potential generating part includes a constant current circuit, a diode supplied with a constant current from the constant current circuit, and a second semiconductor device having substantially the same threshold voltage as the first semiconductor device,
wherein said constant current circuit, said diode, and said second semiconductor device are connected in series and wherein the potential is provided from a node between said constant current circuit and said diode.
2. The temperature detection circuit according to claim 1 , wherein the temperature detection part is a resistive load type inverter circuit.
3. The temperature detection circuit according to claim 1 , wherein the temperature detection part is a constant-current load type inverter circuit.
4. The temperature detection circuit according to claim 1 , wherein the diode is part of a series of cascaded diodes.
5. The temperature detection circuit according to claim 1 , wherein the first and second semiconductor devices are N-channel MOSFETs.
6. The temperature detection circuit according to claim 1 , wherein the first and second semiconductor devices are manufactured based on the same design.
7. The temperature detection circuit according to claim 1 , wherein the first and second semiconductor devices are manufactured through the same process.
8. The temperature detection circuit according to claim 1 , wherein said second semiconductor device has a first terminal connected to said diode, a gate connected directly to said first terminal, and a second terminal connected to ground.
9. The temperature detection circuit according to claim 8 , wherein said first semiconductor device has a gate connected to said node.