IP Library Patent Application 11210248
Patent Application
App. No. 11/210,248

Selection of wavelengths for end point in a time division multiplexed process

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Patent No.
US None
App. No.
11/210,248
Abstract

The present invention provides a method for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. A first wavelength region is selected based on a plasma emission from an etch by product and a second wavelength region is selected based on a plasma emission from a plasma background. A ratio of the first wavelength region to the second wavelength region is computed and used to adjust the monitoring of an attribute of a signal generated from the time division multiplex process. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.

Claims (53)

1 . A method of establishing endpoint during a time division multiplex process comprising the steps of:

subjecting a substrate to the time division multiplex process;

selecting a first wavelength region based on a plasma emission from an etch by product;

selecting a second wavelength region based on a plasma emission from a plasma background;

computing a ratio of said first wavelength region to said second wavelength region;

monitoring an attribute of a signal generated from the time division multiplex process;

adjusting said monitoring step based on said ratio of said computation step;

processing said adjusted attribute of the periodic signal generated from the time division multiplex process using an envelope follower; and

discontinuing the time division multiplex process at a time based on the processing step.

2 . The method of claim 1 wherein said attribute is plasma emission intensity.

3 . The method of claim 2 wherein said monitoring step further comprising monitoring a plurality of regions of plasma emission intensity.

4 . The method of claim 3 wherein said plurality of regions of plasma emission intensity are chosen using a statistical method.

5 . The method of claim 4 wherein said statistical method further comprising factor analysis.

6 . The method of claim 5 wherein said plurality of regions of plasma emission intensity are chosen using an off-line analysis.

7 . The method of claim 6 wherein said off-line analysis further comprising spectra differencing.

8 . The method of claim 3 wherein said monitoring step further comprising performing mathematical operations on said multiple regions of plasma emission intensity.

9 . The method of claim 1 wherein said attribute is plasma impedance.

10 . The method of claim 1 wherein said processing step further comprising using a plurality of peak detect algorithms.

11 . The method of claim 10 wherein said plurality of peak detect algorithms are processed in parallel.

12 . The method of claim 10 wherein said plurality of peak detect algorithms are reset sequentially in a round robin fashion.

13 . The method of claim 12 wherein said reset further comprising a clock period that is at least half the process period of the time division multiplex process.

14 . The method of claim 1 wherein said processing step further comprising post processing of an extracted amplitude detection signal.

15 . The method of claim 14 wherein said post processing is digital signal processing.

16 . The method of claim 15 wherein said digital signal processing comprises a filter.

17 . The method of claim 16 wherein said filter is an infinite impulse response filter.

18 . The method of claim 16 wherein said filter is a finite impulse response filter.

19 . A method for establishing endpoint during a time division multiplexed process, the method comprising the steps of:

a. etching a surface of a substrate in an etching step by contact with a reactive etching gas to removed material from the surface of the substrate and provide exposed surfaces;

b. passivating the surface of the substrate in a passivating step during which the surfaces that were exposed in the preceding etching step are covered by a passivation layer thereby forming a temporary etching stop;

c. alternatingly repeating the etching step and the passivating step;

d. selecting a first wavelength region based on a plasma emission from an etch by product;

e. selecting a second wavelength region based on a plasma emission from a plasma background;

f. computing a ratio of said first wavelength region to said second wavelength region;

g. analyzing an intensity of at least one wavelength region of a plasma emission through the use of an envelope follower algorithm;

h. adjusting said analysis step based on said ratio of said computation step; and

i. discontinuing the time division multiplexed process at a time which is dependent on said analysis step.

20 . A method of establishing endpoint during a time division multiplex process comprising the steps of:

subjecting a substrate to the time division multiplex process;

selecting a first wavelength region based on a plasma emission from an etch by product;

selecting a second wavelength region based on a plasma emission from a plasma background;

computing a ratio of said first wavelength region to said second wavelength region;

monitoring an attribute of a signal generated from the time division multiplex process;

adjusting said monitoring step based on said ratio of said computation step;

processing said adjusted attribute of the periodic signal generated from the time division multiplex process using a peak-hold and decay algorithm; and

discontinuing the time division multiplex process at a time based on the processing step.

21 . The method of claim 20 wherein said attribute is plasma emission intensity.

22 . The method of claim 20 wherein said processing step further comprising using a linear decay algorithm.

23 . The method of claim 20 wherein said processing step further comprising using a non-linear decay algorithm.

24 . The method of claim 20 wherein said processing step further comprising post processing of an extracted amplitude detection signal.

25 . The method of claim 24 wherein said post processing is digital signal processing.

26 . The method of claim 25 wherein said digital signal processing comprises a filter.

27 . The method of claim 26 wherein said filter is an infinite impulse response filter.

28 . The method of claim 26 wherein said filter is a finite impulse response filter.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2009
From: OERLIKON USA, INC.
To: PLASMA-THERM, LLC
Reel/Frame 022203/0740 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2005
From: JOHNSON, DAVID; WESTERMAN, RUSSELL
To: UNAXIS USA INC.
Reel/Frame 016760/0085 →