Semiconductor device having laminated structure
A technique for reducing the size of a semiconductor device is provided. A semiconductor device comprises a base, a semiconductor chip, a chip component, an insulating base, a wiring pattern, a via plug, an external lead-out electrode, a recess, and a resin. The insulating base has a multi-layer structure formed by laminating a plurality of insulator films. The semiconductor chip and the chip component are mounted on the base and embedded in the insulating base. A recess is formed on the surface of the semiconductor device and reaches down to any of wiring conductor layers. The semiconductor chip and the chip component are mounted on the recess.
1. A circuit device comprising:
a base on which a plurality of first circuit elements is fixed, the plurality of first circuit elements having different heights;
a first insulative film formed on the base, the plurality of first circuit elements being embedded in the first insulative film;
a first wiring conductor layer comprising a conductive film arranged on the first insulative film so that the thickness from the base to the conductive film is constant, the first wiring conductor layer connecting the plurality of first circuit elements to each other;
a multi-layered structure having a plurality of laminated components on the first insulative film and the first wiring conductor layer, each of the plurality of laminated components comprising a second wiring conductor layer and a second insulative film that is thinner than the first insulative film;
a recess arranged in the second insulative film, the recess reaching the first or the second wiring conductor layer; and
a second circuit element mounted in the recess, the second circuit element being connected to the first or the second wiring conductor layer, wherein
the plurality of first circuit elements comprise a semiconductor chip and at least one of a chip resistor, a chip capacitor, and a chip inductor, and
the at least one of the chip resistor, chip capacitor, and chip inductor is in chip form to be mounted on the base.
2. The circuit device according to claim 1 , wherein the recess is sealed by a resin that covers the second circuit element.
3. The circuit device according to claim 2 , wherein the second circuit element is selected from the group consisting of semiconductor chips, chip resistors, chip capacitors, and chip inductors, and
the chip resistors, chip capacitors, and chip inductors are in chip form to be mounted in the recess.
4. The circuit device according to claim 3 , wherein the first insulative film or the second insulative film comprises an organic material as an essential ingredient.
5. The circuit device according to claim 3 , wherein the plurality of first circuit elements are in direct contact with and mounted on the base.
6. The circuit device according to claim 3 , wherein upper and side surfaces of the plurality of first circuit elements are encircled by the first insulative film.
7. The circuit device according to claim 2 , wherein the first insulative film or the second insulative film comprises an organic material as an essential ingredient.
8. The circuit device according to claim 1 , wherein the second circuit element is selected from the group consisting of semiconductor chips, chip resistors, chip capacitors, and chip inductors, and
the chip resistors, chip capacitors, and chip inductors are in chip form to be mounted in the recess.
9. The circuit device according to claim 8 , wherein the first insulative film or the second insulative film comprises an organic material as an essential ingredient.
10. The circuit device according to claim 1 , wherein the first insulative film or the second insulative film comprises an organic material as an essential ingredient.