IP Library Granted Patent US 7,319,284
Granted Patent B2
US 7,319,284 · App. 11/219,459 · Granted Jan 15, 2008

Surface acoustic wave device and method for fabricating the same

Assignee: Precision Instrument Development Center National Applied Research Laboratories
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Quick Facts
Patent No.
US 7,319,284
App. No.
11/219,459
Granted
Jan 15, 2008
Kind
B2
Abstract

A novel surface acoustic wave device with a decreased velocity dispersion and a low insertion loss as well as the fabrication method therefor is provided. The surface acoustic wave device includes a substrate, an insulating layer with an indentation on the substrate, a silicon layer with a first portion on the insulating layer and a second portion suspended above the indentation, a piezoelectric layer on the first and the second portions of the silicon layer, and at least an electrode on the piezoelectric layer.

Claims (8)

1. A surface acoustic wave device comprising:

a substrate;

an insulating layer with an indentation on said substrate, wherein said indentation passes through said insulating layer without passing through said substrate;

a silicon layer with a first portion on said insulating layer and a second portion suspended above said indentation;

a piezoelectric layer having third and fourth portions on said first and said second portions of said silicon layer, respectively; and

at least a metallic and interdigital-shaped electrode having a fifth portion and a sixth portion on said third portion and said fourth portion, respectively, wherein said first portion, said third portion and said fifth portion are separated from said second portion, said fourth portion and said sixth portion by an etch window for suspending said second portion, said fourth portion and said sixth portion of said metallic and interdigital-shaped electrode sequentially disposed above said indentation.

2. The surface acoustic wave device according to claim 1 , wherein said substrate is a silicon substrate.

3. The surface acoustic wave device according to claim 1 , wherein said insulating layer is a silica layer.

Assignments (3)
CHANGE OF NAME Recorded Aug 14, 2014
From: PRECISION INSTRUMENT DEVELOPMENT CENTER
To: NATIONAL APPLIED RESEARCH LABORATORIES
Reel/Frame 033534/0161 →
CORRECTIVE TO CORRECT REEL 016961/0716 Recorded Feb 3, 2006
From: CHEN, JYH-SHIN; CHEN, SHENG-WEN; KAO, HUI-LING; YU-SHENG, KUNG; YU-HSIN, LIN; HU, YI-CHIUEN
To: PRECISION INSTRUMENT DEVELOPMENT CENTER
Reel/Frame 017233/0756 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2005
From: CHEN, JYH-SHIN; CHEN, SHENG-WEN; KAO, HUI-LING; KUNG, YU-SHENG; LIN, YU-HSIN; HU, YI-CHIUEN
To: INSTRUMENT TECHNOLOGY RESEARCH CENTER, NATIONAL APPLIED RESEARCH LABORATORIES
Reel/Frame 016961/0716 →
Continuity (1)
Related Publication 20070052324A1 · Mar 8, 2007