Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
View Patent ↗An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH 3 ) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.
1. A method for fabricating a GaN single crystal ingot, the method comprising:
providing a reactor including a ceiling, a floor and a wall having a predetermined height encompassing an internal space between the ceiling and the floor, the ceiling being opposite to the floor;
installing a mount of heatsink material on the ceiling;
mounting a GaN substrate beneath the mount;
providing a lower portion of the internal space with a GaN source gas which corresponds to the GaN substrate; and
epitaxially growing a GaN single crystal on the GaN substrate by supplying the GaN substrate with the GaN source gas in virtue of convection circulation induced by heating the lower portion of the internal space higher than an upper portion.
2. The method of claim 1 , wherein the heating temperature of the upper portion ranges from 300° C. to 900° C. and the heating temperature of the lower portion ranges from 500° C. to 1,200° C., wherein the convection circulation from the temperature gradient between the lower portion and the upper portion provides deposition of the GaN from the GaN source gas on to the GaN substrate to fabricate the GaN single crystal ingot.
3. The method of claim 1 , wherein an internal pressure of the reactor is maintained in a range of about 1 atm to about 10 atm.
4. The method of claim 1 , wherein the providing of the GaN source gas includes:
providing GaCl gas; and
NH 3 gas.
5. The method of claim 4 , wherein the providing of said GaCl gas includes:
providing Ga metal; and
generating said GaCl gas by reacting the Ga metal with HCl gas.
6. The method of claim 1 , wherein carrier gas is further supplied into the internal space.
7. The method of claim 6 , wherein the carrier gas is selected from the group consisting of hydrogen, nitrogen, helium, argon and combinations thereof.
8. The method of claim 1 , wherein the reactor is a closed reactor, and wherein the method further comprises recycling HCl within the closed reactor.
9. The method of claim 1 , wherein the reactor is a closed reactor, and wherein the method further comprises circulating GaCl gas and NH 3 gas within the closed reactor.
10. The method of claim 1 , wherein the internal pressure of the internal space in the reactor has a pressure of greater than 1 atm.
11. The method of claim 10 , wherein the internal pressure of the reactor is maintained in a range of about 2 atm to about 5 atm.
12. The method of claim 1 , wherein the heating temperature of the lower portion is at least 200° C. hotter than the heating temperature of the upper portion.
13. The method of claim 12 , wherein the heating temperature of the lower portion is around 850° C. and the temperature of the upper is around 600° C.
14. A method for fabricating a GaN single crystal ingot, the method comprising:
providing a reactor with an upper portion and a lower portion enclosing an internal space;
providing a GaN substrate within the reactor;
heating the reactor such that the lower portion is hotter than the upper portion;
supplying NH 3 gas to an internal pressure of about 2 atm to about 5 atm;
supplying HCl gas and reacting HCl gas with a Ga metal source to generate GaCl gas; and
generating GaN by circulating GaCl gas and NH 3 gas in the internal space while the reactor is closed.
15. The method of claim 14 , wherein the method further comprises recycling HCl within the closed reactor.
16. The method of claim 14 , wherein the heating temperature of the lower portion is hotter than the upper portion.
17. The method of claim 16 , wherein the heating temperature of the lower portion is at least 200° C. hotter than the heating temperature of the upper portion.
18. The method of claim 17 , wherein the heating temperature of the lower portion is around 850° C. and the temperature of the upper is around 600° C.
19. The method of claim 16 , wherein the heating temperature of the lower portion being hotter than the upper portion causes convection circulation from the temperature gradient between the lower portion and the upper portion, and wherein the convection circulation provides deposition of the GaN from the GaN source gas on to the GaN substrate to fabricate the GaN single crystal ingot.