Patent Assignment
Reel/Frame 020956/0832
Corrective Assignment to Correct the Assignee/Assignor Previously Recorded on Reel 020624 Frame 0240. Assignor(S) Hereby Confirms the Merger.
Recorded: 2008-05-16
Pages: 16
Assignor
SAMSUNG CORNING CO., LTD.
Executed: 2008-03-06
Assignee
SAMSUNG CORNING PRECISION GLASS CO., LTD.
644-1, JINPYEONG-DONG, GUMI, 730-735, KOREA, REPUBLIC OF
Covered Properties
(121)
Process for Producing a Metal-Screened Ceramic Package
Patent:
5,114,642 →
Application:
07/553,634 →
Moil Crack-Off System for a Funnel
Patent:
5,252,113 →
Application:
07/812,759 →
Apparatus for Inspecting Surface of a Face Plate for a Cathode Ray Tube
Patent:
5,305,080 →
Application:
07/901,888 →
Apparatus for Shearing a Gob
Patent:
5,336,289 →
Application:
08/065,219 →
Panel-Testing Apparatus
Patent:
5,426,862 →
Application:
08/235,687 →
Sealing Glass Composition and Method of Making and of Using
Patent:
5,612,261 →
Application:
08/520,985 →
Ni-Cu-Zn Ferrite
Patent:
5,711,893 →
Application:
08/546,928 →
Sealing Glass Composition
Patent:
5,700,744 →
Application:
08/625,362 →
Method and Apparatus of Inserting Support Pins into a Cathode Ray Tube Panel
Patent:
5,964,631 →
Application:
08/917,104 →
Glass Composition for Plasma Display Panel
Patent:
5,932,503 →
Application:
08/986,236 →
Impedance Matching Device for SIO2 Coating Device and a Method of Impedance-Matching Using the Same
Patent:
6,063,454 →
Application:
08/996,107 →
Durable Water Repellent Glass and Its Manufacturing Process
Patent:
6,235,383 →
Application:
09/009,940 →
Water-Repellent Glass and Process for Preparing Same
Patent:
6,210,750 →
Application:
09/224,667 →
Sealing Glass Composition
Patent:
6,083,858 →
Application:
09/263,487 →
High X-Ray Absorbing Panel Glass for Cathode Ray Tubes
Patent:
6,103,649 →
Application:
09/343,160 →
Cathode Ray Tube Panel
Patent:
6,448,707 →
Application:
09/456,054 →
Process for manufacturing a glass article having a durably water-repellent surface
Patent:
6,291,022 →
Application:
09/484,210 →
Method for Fabricating Gan Single Crystal Substrate
On-Line Measuring System for Measuring Substrate Thickness and the Method Thereof
Method for Fabricating Group Iii-V Compound Semiconductor Substrate
Funnel for Cathode Ray Tube
Apparatus and Method for Depositing Thin Films on a Glass Substrate
Formed Type Flat Panel for Use in a Cathode Ray Tube
Flat Panel for Use in a Cathode Ray Tube
Panel for Use in a Cathode Ray Tube
Metal Oxide Powder for High Precision Polishing and Method of Preparation Thereof
Flat Panel for Cathode-Ray Tube
Flat Panel for Use in a Cathode Ray Tube
Surface Light Source Device, Method of Manufacturing the Same and Liquid Crystal Display Apparatus Having the Same
Preparation of Field Emission Array Comprising Nanostructures
Flat Panel with Blend Round Portion Structure for Use in a Cathode Ray Tube
Surface Light Source Device and Liquid Crystal Display Apparatus Having the Same
Planar Light Source Device and Display Apparatus Having the Same
Surface Light Source Device, Method of Manufacturing the Same and Back Light Unit Having the Same
Composition for Preparing Nanoporous Material
Method for Forming Highly Conductive Metal Pattern on Flexible Substrate and Emi Filter Using Metal Pattern Formed by the Method
Insulating Film Composition Having Improved Mechanical Property
Silica sol and process for preparing the same
Application:
11/022,221 →
Publication:
US 2005/0137268
Panel for Use in a Cathode Ray Tube
Filter Assembly, Method of Manufacturing the Same, and Plasma Display Panel Using the Same
Sapphire/Gallium Nitride Laminate Having Reduced Bending Deformation
Flat lamp
Application:
11/069,974 →
Publication:
US 2006/0006805
Phosphor, and Fluorescent Lamp and Plasma Display Panel Employing the Same
Application:
11/084,774 →
Publication:
US 2006/0028136
Flat Lamp
Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof
Application:
11/117,683 →
Publication:
US 2005/0247260
Method for Selectively Separating Semiconductive Carbon Nanotubes
Display Filter, Display Device Including the Display Filter, and Method of Manufacturing the Display Filter
Method of manufacturing flat lamp
Application:
11/141,051 →
Publication:
US 2006/0063463
Glass Panel and a Cathode Ray Tube Including the Same
Formed type flat panel for use in a cathode ray tube
Application:
11/179,416 →
Publication:
US 2005/0242700
Novel Black Matrix, Method for the Preparation Thereof, Flat Display Device and Electromagnetic Interference Filter Employing the Same
Funnel for use in a cathode ray tube
Application:
11/194,671 →
Publication:
US 2006/0132019
Flat lamp
Application:
11/200,119 →
Publication:
US 2006/0091809
Funnel for Use in a Cathode Ray Tube
Application:
11/200,123 →
Publication:
US 2006/0145590
Method for preparing low dielectric constant film by using dual organic siloxane precursor
Application:
11/212,715 →
Publication:
US 2006/0063012
Electromagnetic Shielding Film, Plasma Display Panel Filter Using the Electromagnetic Shielding Film, Plasma Display Panel Device Including the Electromagnetic Shielding Film, and Method of Manufacturing the Electromagnetic Shielding Film
Method for preparing surfactant-templated, mesoporous low dielectric film
Application:
11/216,077 →
Publication:
US 2006/0046079
Apparatus for Fabrication of Gan Bulk Single Crystal and Fabrication Method of Gan Single Crystal Ingot Using the Same
Electromagnetic Wave Shielding Filter, Method of Manufacturing the Same, Pdp Apparatus Including the Same Filter
Composition for Preparing Nanoporous Material Comprising Calixarene Derivative
Porous low-dielectric constant (k) thin film with controlled solvent diffusion
Application:
11/263,867 →
Publication:
US 2006/0135633
Front-Side Filter and Plasma Display Panel Device Including the Front-Side Filter
Black Matrix, Method for Preparing the Same, and Flat Panel Display and Electromagnetic Interference Filter Using the Same
Method for Manufacturing High-Transmittance Optical Filter for Image Display Devices
Optical filter for image display devices and manufacturing method thereof
Application:
11/283,902 →
Publication:
US 2006/0144713
Method of preparing mesoporous thin film having low dielectric constant
Application:
11/283,926 →
Publication:
US 2006/0110940
Single Crystalline Gallium Nitride Thick Film Having Reduced Bending Deformation
Siloxane-based polymer and method for forming dielectric film using the polymer
Application:
11/304,628 →
Publication:
US 2006/0134441
Composition for forming low dielectric thin film comprising porous nanoparticles and method of preparing low dielectric thin film using the same
Application:
11/319,449 →
Publication:
US 2006/0145306
External Light-Shielding Layer, Filter for Display Device Including the External Light-Shielding Layer and Display Device Including the Filter
Display Filter and Display Device Including the Same
Method for forming positive metal pattern and EMI filter using the same
Application:
11/325,339 →
Publication:
US 2006/0183061
Epitaxial Growth Method
Silicon Film, Crystalline Film and Method for Manufacturing the Same
Wafer structure and epitaxial growth method for growing the same
Application:
11/326,172 →
Publication:
US 2006/0151797
Epitaxial Growth Method
Composition for forming low dielectric thin film comprising polymer nanoparticles and method of preparing low dielectric thin film using the same
Application:
11/335,689 →
Publication:
US 2006/0159938
Composition for forming low-dielectric constant film comprising fullerene, low-dielectric constant film formed from the composition and method for forming the low-dielectric constant film
Application:
11/347,238 →
Publication:
US 2006/0175685
Method for preparing a polishing slurry having high dispersion stability
Application:
11/389,396 →
Publication:
US 2006/0213126
Chalcogenide precursor compound and method for preparing chalcogenide thin film using the same
Application:
11/412,028 →
Publication:
US 2007/0166645
Semiconductor Thin Film Using Self-Assembled Monolayers and Methods of Production Thereof
Backlight Unit with an Oxide Compound-Laminated Optical Layer
Backlight Unit and Light Source for Use in Same
Single-crystalline gallium nitride substrate
Application:
11/432,502 →
Publication:
US 2006/0255339
Porous Chalcogenide Thin Film, Method for Preparing the Same and Electronic Device Using the Same
Application:
11/439,036 →
Publication:
US 2007/0090346
Nitride-Based Light Emitting Devices and Methods of Manufacturing the Same
Method of manufacturing carbon nanofiber and apparatus for manufacturing the same
Application:
11/513,413 →
Publication:
US 2010/0143235
Gallium Nitride Thin Film on Sapphire Substrate Having Reduced Bending Deformation
Method of Fabricating Gan Substrate
Method of Fabricating Gan
PDP filter and method of manufacturing the same
Application:
11/580,972 →
Publication:
US 2007/0085458
Single crystalline a-plane nitride semiconductor wafer having orientation flat
Application:
11/581,339 →
Publication:
US 2007/0085170
Method of Fabricating Multi-Freestanding Gan Wafer
Method of manufacturing single crystalline gallium nitride thick film
Application:
11/602,949 →
Publication:
US 2007/0117356
PDP filter having multi-layer thin film and method of manufacturing the same
Application:
11/634,871 →
Publication:
US 2007/0281178
Light Blocking Layer, Display Filter Having the Light Blocking Layer, and Display Apparatus Having the Display Filter
Flat Electrode, Ultra Thin Surface Light Source Device and Backlight Unit Having the Same
Application:
11/684,531 →
Publication:
US 2007/0284988
Display filter and display apparatus having the same
Application:
11/709,144 →
Publication:
US 2007/0194679
Display filter and display apparatus including the same
Application:
11/715,438 →
Publication:
US 2007/0210821
Zn ion implanting method of nitride semiconductor
Application:
11/723,581 →
Publication:
US 2007/0224790
Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same
Application:
11/725,310 →
Publication:
US 2008/0173962
Optical filter for display apparatus
Application:
11/784,147 →
Publication:
US 2007/0242177
Display Filter and Display Apparatus Having the Same
Method for Manufacturing High-Density Indium Tin Oxide Target, Methods for Preparing Tin Oxide Powder and Indium Oxide Powder Used Therefor
Method and apparatus for growing GaN bulk single crystals
Application:
11/806,530 →
Publication:
US 2007/0277731
Method of manufacturing single crystalline gallium nitride thick film
Application:
11/807,464 →
Publication:
US 2008/0067543
Coating Layer for Blocking Emi, Optical Filter Including the Same, and Display Apparatus Including the Same
External Light Shielding Film and Display Filter Having the Same
Gallium Nitride/Sapphire Thin Film Having Reduced Bending Deformation
External Light-Shielding Layer and Display Apparatus Having the Same for Improving Contrast Ratio of the Display Appartus
Functional film composition for display
Application:
11/878,970 →
Publication:
US 2008/0048156
Surface light source device having secondary electron emission layer, method of manufacturing the same, and backlight unit having the same
Application:
11/897,251 →
Publication:
US 2008/0054779
Surface Light Source, Method of Driving the Same, and Backlight Unit Having the Same
Complex Film for Display Apparatus and Display Apparatus Having the Same
Application:
11/950,534 →
Publication:
US 2008/0137349
External Light Shielding Film and Optical Filter for Display Apparatus Having the Same
Gan Single Crystal Substrate and Method for Processing Surface of Gan Single Crystal Substrate
External Light Shielding Layer, Filter for Display Apparatus and Display Apparatus Having the Same
Optical sheet and display optical filter for increasing color gamut
Application:
11/987,184 →
Publication:
US 2008/0164799
Surface light source device and backlight unit having the same
Application:
11/999,255 →
Publication:
US 2008/0143263
External light shielding film for display apparatus, method of manufacturing the same and filter for display apparatus having the same
Surface light source device and backlight unit having the same
Application:
12/001,211 →
Publication:
US 2008/0143667
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Dec 5, 2001
From: HA, JONG EUN; KIM, TAEK CHEON; BAEK, JU YEOL; CHOI, JAE SEOK
To: SAMSUNG CORNING CO., LTD.
Reel/Frame 012372/0418 →
Merger
Mar 10, 2008
From: SAMSUNG CORNING PRECISION GLASS CO., LTD.
To: SAMSUNG CORNING CO., LTD.
Reel/Frame 020624/0240 →
Change of Name
Aug 6, 2010
From: SAMSUNG CORNING PRECISION GLASS CO., LTD.
To: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
Reel/Frame 024804/0238 →
Change of Name
Jan 16, 2015
From: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.
To: CORNING PRECISION MATERIALS CO., LTD.
Reel/Frame 034774/0676 →