Epitaxial growth method
Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
1. An epitaxial growth method comprising the following steps carried out in sequential order:
forming a buffer layer on a single crystalline wafer using a single crystalline material;
forming a mask layer on the buffer layer;
forming a plurality of holes in the mask layer to expose portions of the buffer layer;
forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes;
removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and
forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.
2. The method according to claim 1 , wherein the crystalline material layer is formed of a group III nitride semiconductor.
3. The method according to claim 2 , wherein the single crystalline wafer is formed of Al 2 O 3 , and the buffer layer and the crystalline material layer are formed of GaN.
4. The method according to claim 1 , wherein the single crystalline wafer is formed of one selected from the group consisting of Si, GaAs, SiC, GaN, and Al 2 O 3 .
5. The method according to claim 4 , wherein the single crystalline wafer is formed of Al 2 O 3 , and the buffer layer and the crystalline material layer are formed of GaN.
6. The method according to claim 1 , wherein the single crystalline wafer is formed of Al 2 O 3 , and the buffer layer and the crystalline material layer are formed of GaN.
7. The method according to claim 6 , wherein the mask layer is formed of photoresist.
8. The method according to claim 1 , wherein the mask layer is formed of photoresist.
9. The method according to claim 1 , wherein the mask layer is formed of a material having a lower etch rate than the buffer layer.
10. The method according to claim 1 , wherein the crystalline material layer is formed using a vapor deposition process.
11. The method according to claim 10 , wherein the vapor deposition process is one selected from the group consisting of a halide or hydride vapor phase epitaxy (HVPE) process, a metal organic chemical vapor deposition (MOCVD), and a molecular beam epitaxy (MBE) process.
12. The method according to claim 1 , wherein the annealing of the buffer layer is performed at a temperature of 850° C. or higher.
13. A semiconductor structure resulting from the method of claim 1 .
14. An epitaxial growth method comprising:
forming a buffer layer on a single crystalline wafer using a single crystalline material;
forming a mask layer on the buffer layer;
forming a plurality of holes in the mask layer to expose portions of the buffer layer;
forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes;
removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and
forming a crystalline material layer on the porous buffer layer using an epitaxial growth process, wherein the plurality of holes in the mask layer are formed using a laser.
15. The method according to claim 14 , wherein the single crystalline wafer is formed of Al 2 O 3 , and the buffer layer and the crystalline material layer are formed of GaN.
16. A semiconductor structure resulting from the method of claim 14 .