Nitride-based light emitting devices and methods of manufacturing the same
View Patent ↗A light emitting device may include an n-clad layer formed on a crystalline wafer; a porous layer formed by processing the n-clad layer in a mixed gas atmosphere of HCl and NH 3 . The light emitting device may further include an active layer and a p-clad layer formed on the porous layer.
1. A method of manufacturing a light emitting device, the method comprising:
forming an n-clad layer on a crystalline wafer;
forming a porous layer by processing the n-clad layer in a gas atmosphere of HCl and NH 3 after the forming the n-clad layer; and
sequentially forming an active layer and a p-clad layer on the porous layer.
2. The method of claim 1 , wherein processing the n-clad layer is performed at a temperature of about 950° C. to about 1200° C., inclusive.
3. The method of claim 2 , wherein processing the n-clad layer is performed at a temperature of about 1065° C.
4. The method of claim 1 , wherein processing the n-clad layer is performed in a halide or hydride vapor phase epitaxy (HVPE) system.
5. The method of claim 1 , wherein a mixture ratio of HCl and NH 3 is about 1:10.
6. The method of claim 1 , wherein the gas further includes a carrier gas.
7. The method of claim 6 , wherein the carrier gas includes at least one of N 2 , Ar and H 2 .
8. The method of claim 6 , wherein a mixture ratio of HCl, NH 3 and the carrier gas is about 1:10:80.
9. The method of claim 1 , wherein the porous layer is formed to a thickness of about 1 μm to about 10 μm inclusive.
10. The method of claim 1 , wherein the crystalline wafer is a Si, GaAs, SiC, GaN or sapphire substrate.
11. The method of claim 1 , wherein the n-clad layer is an n-GaN layer and the p-clad layer is a p-GaN layer.
12. The method of claim 1 , wherein the active layer has a multi-quantum well (MQW) structure.
13. The method of claim 12 , wherein the active layer has a GaN/InGaN/GaN MQW or GaN/AlGaN/GaN MQW structure.
14. The method of claim 1 , wherein the n-clad layer, the active layer and the p-clad layer are formed using vapor deposition.
15. The method of claim 14 , wherein the vapor deposition is one of halide or hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
16. A method of manufacturing a light emitting device, the method comprising:
forming an n-clad layer on a crystalline wafer;
forming a porous layer including a plurality of pillars by processing the n-clad layer in a gas atmosphere of HCl and NH 3 after the forming the n-clad layer;
forming an active layer of dots on the pillars, the dots each separated from each other; and
forming a p-clad layer on the active layer.