Gallium nitride thin film on sapphire substrate having reduced bending deformation
View Patent ↗A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown thereon by secondary nitradation. The gallium nitride thin film on sapphire substrate comprises an etching trench structure formed on a sapphire substrate, wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies Equation 1 below, and corresponds to or is located above a function graph drawn when Y 0 is 6.23±1.15, A is 70.04 ±1.92, and T is 1.59±0.12: Y=Y 0 +A·e −(X−1)/T , [Equation 1] where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y 0 , A, and T are positive numbers.
1. A gallium nitride thin film on sapphire substrate comprising:
an etching trench structure formed on a sapphire substrate,
wherein a function graph of a curvature radius Y according to a thickness X of a gallium nitride film satisfies the following Equation 1 and corresponds to or is located above a function graph drawn when Y 0 is 6.23±1.15, A is 70.04±1.92, and T is 1.59±0.12:
Y=Y 0 +A·e −(X−1)/T [Equation 1]
where Y is the curvature radius m, X is the thickness of the gallium nitride film, and Y.sub.0, A, and T are positive numbers.
2. The gallium nitride thin film on sapphire substrate of claim 1 , wherein the etching trench structure has a height less than 0.5 μm, a width in the range of 50 μm to 60 μm, and the frequency in the range of 500 to 900 per 1mm 2 .
3. An electric or electronic device comprising a gallium nitride thin film on sapphire substrate according to claim 1 or 2 .
4. A single crystalline gallium nitride film obtained by being separated from a gallium nitride thin film on sapphire substrate according to claim 1 or 2 .