Semiconductor thin film using self-assembled monolayers and methods of production thereof
View Patent ↗A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.
1. A semiconductor thin film comprising a self-assembled monolayer, an inorganic seed layer and a semiconductor layer on an insulating layer wherein the self-assembled monolayer is formed on the insulating layer, the inorganic seed layer is formed on the self-assembled monolayer and the semiconductor layer is formed on the inorganic seed layer and wherein the self-assembled monolayer is formed from a precursor compound represented by Formula 1 below:
wherein X is selected from the group consisting of —SH, —NH 2 , —SO 3 H, —SeH, —C 5 H 4 N, —COSeH, —COSH, —SH, —OH, —COOH, —CONHOH, —C 6 H 4 N 3 , —NH—C 6 H 4 N 3 , —O—C 6 H 4 N 3 , —OC(═O)C 6 H 4 N 3 , —OPO 3 H 2 , —PO 3 H 2 , amino, and phosphinyl;
Y is selected from the group consisting of substituted and unsubstituted C 1 -C 10 alkylene, substituted and unsubstituted C 1 -C 10 alkenylene, substituted and unsubstituted C 1 -C 10 alkynylene, substituted and unsubstituted C 6 -C 20 arylene, and substituted and unsubstituted C 6 -C 20 arylalkylene groups; and
R 1 , R 2 and R 3 are each independently selected from the group consisting of a hydrogen atom, substituted and unsubstituted C 1 -C 3 alkyl groups, substituted and unsubstituted C 1 -C 10 alkoxy groups, and a halogen atom, with the proviso that at least one of R 1 , R 2 and R 3 is a hydrolyzable group.
2. The semiconductor thin film according to claim 1 , wherein the inorganic seed layer has a structure represented by Formula 2 below:
M-X (2)
wherein M is a metal atom selected from the group consisting of Group II, III and IV elements; and
X is a Group VI chalcogen element.
3. The semiconductor thin film according to claim 2 , wherein, in Formula 2, M is selected from the group consisting of cadmium (Cd), zinc (Zn), mercury (Hg), gallium (Ga), indium (In), lead (Pb) and tin (Sn), and X is selected from the group consisting of sulfur (S), selenium (Se) and tellurium (Te).
4. The semiconductor thin film according to claim 1 , wherein the semiconductor layer is an inorganic or an organic-inorganic hybrid semiconductor layer.
5. The semiconductor thin film according to claim 4 , wherein the inorganic semiconductor layer is a chalcogenide semiconductor layer having a hexagonal structure of M-X, which is formed from a precursor compound represented by Formula 3 below:
wherein L is selected from the group consisting of 2,3-lutidine, 2,4-lutidine, 2,5-lutidine, 2,6-lutidine, 3,4-lutidine, 3,5-lutidine, 3,6-lutidine, 2,6-lutidine-α 2 ,3-diol, 2-hydroxypyridine, 3-hydroxypyridine, 4-hydroxypyridine, 2-hydroxyquinoline, 6-hydroxyquinoline, 8-hydroxyquinoline, 8-hydroxy-2-quinolinecarbonitrile, 8-hydroxy-2-quinolinecarboxylic acid, 2-hydroxy-4-(trifluoromethyl)pyridine, and N,N,N,N-tetramethylethylenediamine;
M is a metal atom selected from the group consisting of Group II, III and IV elements;
X is a Group VI chalcogen element;
R is hydrogen, substituted or unsubstituted C 1 -C 30 alkyl, substituted or unsubstituted C 1 -C 30 alkenyl, substituted or unsubstituted C 1 -C 30 alkynyl, substituted or unsubstituted C 2 -C 30 alkoxy, substituted or unsubstituted C 6 -C 30 aryl, substituted or unsubstituted C 6 -C 30 aryloxy, substituted or unsubstituted C 2 -C 30 heteroaryl, substituted or unsubstituted C 2 -C 30 heteroaryloxy, or substituted or unsubstituted C 2 -C 30 heteroarylalkyl;
a is an integer from 0 to 2; and
b is 2 or 3.
6. The semiconductor thin film according to claim 5 , wherein, in Formula 3, M is selected from the group consisting of cadmium (Cd), zinc (Zn), mercury (Hg), gallium (Ga), indium (In), lead (Pb) and tin (Sn), and X is selected from the group consisting of sulfur (S), selenium (Se) and tellurium (Te).
7. The semiconductor thin film according to claim 5 , wherein the compound is represented by Formula 4 below:
8. An electronic device comprising the semiconductor thin film according to claim 1 .
9. The electronic device according to claim 8 , wherein the electronic device is a thin film transistor, a field-effect transistor, an electroluminescence device, a photovoltaic cell, or a memory device.
10. A semiconductor thin film comprising a self-assembled monolayer and an inorganic or organic-inorganic hybrid semiconductor layer formed sequentially on an insulating layer wherein the self-assembled monolayer is formed from a precursor compound represented by Formula 1 below:
wherein X is selected from the group consisting of —SH, —NH 2 , —SO 3 H, —SeH, —C 5 H 4 N, —COSeH, —COSH, —SH, —OH, —COOH, —CONHOH, —C 6 H 4 N 3 , —NH—C 6 H 4 N 3 , —O—C 6 H 4 N 3 , —OC(═O)C 6 H 4 N 3 , —OPO 3 H 2 , —PO 3 H 2 , amino, and phosphinyl;
Y is selected from the group consisting of substituted and unsubstituted C 1 -C 10 alkylene, substituted and unsubstituted C 1 -C 10 alkenylene, substituted and unsubstituted C 1 -C 10 alkynylene, substituted and unsubstituted C 6 -C 20 arylene, and substituted and unsubstituted C 6 -C 20 arylalkylene groups; and
R 1 , R 2 and R 3 are each independently selected from the group consisting of a hydrogen atom, substituted and unsubstituted C 1 -C 3 alkyl groups, substituted and unsubstituted C 1 -C 10 alkoxy groups, and a halogen atom, with the proviso that at least one of R 1 , R 2 and R 3 is a hydrolysable group.