Silicon film, crystalline film and method for manufacturing the same
View Patent ↗A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the group consisting of metals, compounds and/or oxides on the insulating substrate, crystallizing the buffer layer by annealing, and forming a crystalline and/or silicon film by epitaxy. Silicon and crystalline films manufactured by the method provided may have greater crystallinity, greater uniformity and/or higher charge carrier mobility.
1. A method of manufacturing a silicon film comprising:
forming an insulating substrate;
forming a buffer layer on the insulating substrate, wherein the buffer layer is a material with a lower melting point than silicon, the material being selected from the group consisting of metals, compounds or oxides;
crystallizing the buffer layer by annealing; and
forming a silicon layer on the crystallized buffer layer.
2. The method according to claim 1 , wherein crystallizing the buffer layer by annealing includes annealing portions of the buffer layer.
3. The method according to claim 1 , wherein crystallizing the buffer layer by annealing includes annealing the entire buffer layer.
4. The method according to claim 1 , wherein annealing the buffer layer includes moving an annealing unit relative to a surface of the buffer layer, the annealing unit having a belt shape.
5. The method according to claim 4 , wherein the annealing unit is a heater selected from the group consisting of a line heater, a mercury lamp heater, a xenon lamp heater or a laser device.
6. The method according to claim 1 , wherein the insulating substrate is formed of glass or plastic.
7. The method according to c 1 aim 1 , wherein forming the silicon layer is performed by epitaxy or chemical vapor deposition.
8. A method of manufacturing a silicon film, comprising:
forming an insulating substrate;
forming a buffer layer on the insulating substrate;
crystallizing the buffer layer by annealing; and
forming a silicon layer on the crystallized buffer layer by chemical vapor deposition or epitaxy, wherein the epitaxy includes heating the buffer layer, etching the buffer layer with a gas, and forming epitaxial layers on the heated buffer layer, the epitaxial layers forming until the silicon layer has a thickness of approximately 150 nm.
9. The method according to claim 8 , wherein the gas is hydrochloric gas.
10. The method according to claim 8 , wherein forming the epitaxial layers includes flowing a gas mixture over the heated buffer layer, the gas mixture containing at least silicon and a dopant.
11. The method according to claim 8 , wherein crystallizing the buffer layer by annealing includes annealing portions of the buffer layer.
12. The method according to claim 8 , wherein crystallizing the buffer layer by annealing includes annealing the entire buffer layer.
13. The method according to claim 8 , wherein annealing the buffer layer includes moving an annealing unit relative to a surface of the buffer layer, the annealing unit having a belt shape.
14. The method according to claim 13 , wherein the annealing unit is a heater selected from the group consisting of a line heater, a mercury lamp heater, a xenon lamp heater or a laser device.
15. The method according to claim 8 , wherein the insulating substrate is formed of glass or plastic.
16. The method according to claim 8 , wherein the gas is hydrochloric gas.
17. The method according to claim 8 , wherein forming the epitaxial layers includes flowing a gas mixture over the heated buffer layer, the gas mixture containing at least silicon and a dopant.
18. A method of manufacturing a crystalline film comprising:
forming a substrate;
forming a buffer layer on a substrate;
crystallizing the buffer layer by annealing; and
forming a crystalline layer on the crystallized buffer layer by epitaxy,
wherein the epitaxy includes heating the crystallized buffer layer, etching the crystallized buffer layer with hydrochloric gas, and growing epitaxial layers on the heated buffer layer by flowing a gas mixture over the heated buffer layer, the gas mixture containing at least one crystallizable material and a dopant.
19. The method according to claim 18 , wherein forming the buffer layer includes sputtering, plasma enhanced chemical vapor deposition, chemical beam epitaxy, chemical vapor deposition or chemical vapor deposition.
20. The method according to claim 18 , wherein crystallizing the buffer layer includes annealing a partial surface of the buffer layer.
21. The method according to claim 18 , wherein crystallizing the buffer layer includes moving an annealing unit substantially parallel to a surface of the buffer layer.
22. The method according to claim 21 , wherein the annealing unit is a heater selected from the group consisting of a line heater, a mercury lamp heater, a xenon lamp heater or a laser device.
23. The method according to claim 18 , wherein forming the crystalline layer includes a silicon layer.