Method and apparatus for programming/erasing a non-volatile memory
View Patent ↗A non-volatile memory (NVM) that can be optimized for data retention or endurance is divided into portions that are optimized for one or the other or potentially some other storage characteristic. For the portion allotted for data retention, the memory cells are erased to a relatively greater extent. For the portion allotted for high endurance, the memory cells are erased to a relatively lesser extent. This is conveniently achieved by simply raising the level of the current reference that is used to determine if a cell has been sufficiently erased for the high data retention cells. The higher endurance cells thus will typically receive fewer erase pulses than the memory cells for high data retention. The reduced erasing requirement for the high endurance cells results in overall faster erasing and less stress on the high endurance cells as well as on the circuitry that generates the high erase voltages.
1. A method for programming/erasing a non-volatile memory (NVM), comprising:
defining a first portion of the NVM for having a first storage characteristic;
defining a second portion of the NVM for having a second storage characteristic different from the first storage characteristic;
performing a program/erase operation on the first portion that is more favorable for achieving the first storage characteristic than for achieving the second storage characteristic; and
performing a program/erase operation on the second portion that is more favorable for achieving the second storage characteristic than for achieving the first storage characteristic,
wherein the first storage characteristic is endurance and the second storage characteristic is retention.
2. The method of claim 1 further comprising:
defining a third portion of the NVM for having a third storage characteristic; and
performing a program/erase operation on the third portion that is more favorable for achieving the third storage characteristic than for achieving the first storage and more favorable for achieving the third storage characteristic than for achieving the second storage characteristic.
3. The method of claim 2 , wherein:
the third storage characteristic is a combination of endurance and data retention.
4. The method of claim 1 wherein:
the NVM comprises a memory array;
the first portion comprises a first plurality of memory cells of the memory array;
the second portion comprises a second plurality of memory cells of the memory array;
the program/erase operation on the first portion comprises an erase operation in which each memory cell of the first plurality of memory cells has a current compared to a reference current of a first level; and
the program/erase operation on the second portion comprises an erase operation in which each memory cell of the second plurality of memory cells has a current compared to a reference current of a second level in which the second level is different from the first level.
5. The method of claim 4 wherein:
the program/erase operation is an erase operation; and
the first level is lower than the second level.
6. The method of claim 1 wherein:
the program/erase operation on the first portion provides a first program/erase margin; and
the program/erase operation on the second portion provides a second program/erase margin, wherein the second margin is greater than the first margin.
7. The method of claim 6 wherein the program/erase operation on the second portion provides a greater stress on the second portion than the program/erase operation on the first portion provides on the first portion.
8. The method of claim 7 wherein the greater stress arises from applying more program/erase pulses.
9. The method of claim 7 wherein the greater stress arises from applying program/erase pulses at a higher voltage.
10. The method of claim 6 wherein the program/erase operations on the first and second portions are performed by a peripheral circuit that experiences less stress in performing the program/erase operation on the first portion than in performing the program/erase operation on the second portion.
11. A non-volatile memory (NVM), comprising:
an NVM array;
a control circuit means for defining a first portion of the NVM array to have a first storage characteristic and a second portion of the NVM array to have a second storage characteristic different from the first characteristic; and
program/erase means for performing a program/erase operation on the first portion that is more favorable for achieving the first storage characteristic than for achieving the second storage characteristic and a program/erase operation on the second portion that is more favorable for achieving the second storage characteristic than for achieving the first storage characteristic,
wherein the first storage characteristic is endurance and the second storage characteristic is retention.
12. The NVM of claim 11 , wherein:
the program/erase operation on the first portion provides less stress than the program/erase operation on the second portion.
13. The NVM of claim 12 wherein the greater stress arises from applying more program/erase pulses.
14. The NVM of claim 12 wherein the greater stress arises from applying program/erase pulses at a higher voltage.
15. The NVM of claim 12 wherein the performing the program/erase operations on the first and second portions are performed by a peripheral circuit that experiences less stress in performing the program/erase operation on the first portion than in performing the program/erase operation on the second portion.
16. The NVM of claim 12 , wherein:
the first portion comprises a first plurality of memory cells of the NVM array;
the second portion comprises a second plurality of memory cells of the NVM array;
the program/erase operation on the first portion comprises an erase operation in which each memory cell of the first plurality of memory cells has a current compared to a reference current of a first level; and
the program/erase operation on the second portion comprises an erase operation in which each memory cell of the second plurality of memory cells has a current compared to a reference current of a second level in which the second level is different from the first level.
17. The NVM of claim 11 , wherein:
the program/erase operation on the first portion provides a first program/erase margin; and
the program/erase operation on the second portion provides a second program erase margin, wherein the second margin is greater than the first margin.
18. A method of programming/erasing a non-volatile memory (NVM) cell, comprising:
determining a desired storage characteristic of the NVM cell,
wherein the step of determining the desired storage characteristic comprises selecting at least one of retention or endurance;
selecting a program/erase methodology, from a plurality of program/erase methodologies, for the desired storage characteristic; and
performing the selected program/erase methodology.
19. The method of claim 18 , wherein the step of selecting at least one of retention or endurance comprises selecting both retention and endurance.
20. The method of claim 19 , wherein:
the plurality of program/erase methodologies comprises a program/erase methodology for retention and a program/erase methodology for endurance; and
the program/erase methodology for retention generates more stress than the program/erase methodology for endurance.
21. A method for programming/erasing a non-volatile memory (NVM), comprising:
defining a first portion of the NVM for having a first storage characteristic;
defining a second portion of the NVM for having a second storage characteristic different from the first storage characteristic;
performing a program/erase operation on the first portion that is more favorable for achieving the first storage characteristic than for achieving the second storage characteristic; and
performing a program/erase operation on the second portion that is more favorable for achieving the second storage characteristic than for achieving the first storage characteristic,
wherein the first storage characteristic comprises at least endurance and the second storage characteristic comprises at least retention.