Method for manufacturing semiconductor device

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a bottom electrode film;

forming a high dielectric constant film on the bottom electrode film;

performing a heat treatment in an oxidizing atmosphere for the high dielectric constant film to crystallize the high dielectric constant film, a flow rate of an oxidizing gas being set to be in a range of from 10 sccm to 100 sccm during the heat treatment; and

forming a top electrode film on the high dielectric constant film;

wherein a rocking curve full width at half maximum for a (111) plane of the high dielectric constant film is equal to or smaller than 4.6 degrees.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the flow rate of the oxidizing gas is set to 50 sccm or less.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxidizing gas is one selected from a group consisting of O 2 gas, O 3 gas, and N 2 O gas.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein an inert gas is supplied at a flow rate of 1500 sccm or more during the heat treatment.

5. The method for manufacturing a semiconductor device according to claim 4 , wherein the inert gas is one selected from a group consisting of Ar gas, N 2 gas, and He gas.

6. The method for manufacturing a semiconductor device according to claim 1 , wherein the heat treatment is performed at a temperature of 550° C. or higher.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein the heat treatment is performed at a temperature range of from 580° C. to 650° C.

8. The method for manufacturing a semiconductor device according to claim 1 , wherein the high dielectric constant film is a ferroelectric film.

9. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of performing a second heat treatment for the high dielectric constant film at a higher temperature than a temperature in the heat treatment, between said step of performing a heat treatment and said step of forming a top electrode film.

10. The method for manufacturing a semiconductor device according to claim 9 , wherein the second heat treatment is performed in an atmosphere in which an oxygen concentration is 50% or more.

11. The method for manufacturing a semiconductor device according to claim 9 , wherein the second heat treatment is performed at a temperature of 650° C. or higher.

12. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of forming a conductive film on the top electrode film after said step of forming a top electrode film.

13. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the high dielectric constant film is 150 nm or less.

14. The method for manufacturing a semiconductor device according to claim 1 , wherein the high dielectric constant film is an amorphous film or a microcrystalline film.

15. A method for manufacturing a semiconductor device comprising the steps of:

forming a bottom electrode film;

forming a high dielectric constant film on the bottom electrode film;

performing a first heat treatment in a mixed atmosphere of an oxidizing gas and an inert gas to crystallize the high dielectric constant film, a flow rate of the oxidizing gas being lower than 50 sccm, and a flow rate of the inert gas being 1500 sccm or more;

forming a first top electrode film on the high dielectric constant film;

performing a second heat treatment in an oxidizing atmosphere; and

forming a second top electrode film on the first top electrode film;

wherein a rocking curve full width at half maximum for a (111) plane of the high dielectric constant film is equal to or smaller than 4.6 degrees.

16. The method for manufacturing a semiconductor device according to claim 15 , wherein the first heat treatment is performed at a temperature range of from 540° C. to 620° C.

17. The method for manufacturing a semiconductor device according to claim 15 , wherein the first heat treatment is performed at 585° C.

18. The method for manufacturing a semiconductor device according to claim 15 , wherein one or more of metal films or metal oxide conductive films that contain at least one selected from a group consisting of platinum, iridium, ruthenium, rhodium, and SrRuO 3 are formed as the first top electrode film.

19. The method for manufacturing a semiconductor device according to claim 15 , wherein the second heat treatment is performed at a temperature of 650° C. or higher.