IP Library Granted Patent US 7,273,405
Granted Patent B2
US 7,273,405 · App. 11/227,151 · Granted Sep 25, 2007

Sintered rare earth magnetic alloy wafer and wafer surface growing machine

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Quick Facts
Patent No.
US 7,273,405
App. No.
11/227,151
Granted
Sep 25, 2007
Kind
B2
Abstract

A method of producing a sintered rare earth magnetic alloy wafer comprises a step of using a cutter to slice a wafer of a thickness of not greater than 3 mm from a sintered rare earth magnetic alloy having ferromagnetic crystal grains surrounded by a more readily grindable grain boundary phase and a step of surface-grinding at least one cut surface of the obtained wafer with a grindstone to form at a surface layer thereof flat ferromagnetic crystal grain cross-sections lying parallel to the wafer planar surface. The method enables high-yield production of a sintered rare earth magnetic alloy wafer having flat surfaces.

Claims (4)

1. A sintered rare earth magnetic alloy wafer of a thickness of not greater than 3 mm comprising:

a sintered rare earth magnetic alloy composed of ferromagnetic crystal grains surrounded by a softer grain boundary phase, flat ferromagnetic crystal grain cross-sections lying parallel to the wafer planar surface being present at one or both surfaces, and the surface or surfaces having a flatness of not greater than 8 μm.

2. A sintered rare earth magnetic alloy wafer according to claim 1 whose planar surface profile is square, polygonal, circular or elliptical planar profile.

3. A sintered rare earth magnetic alloy wafer according to claim 2 , which wafer is bored with a hole within a planar surface.

Assignments (1)
CHANGE OF NAME Recorded Nov 5, 2007
From: DOWA MINING CO., LTD.
To: DOWA HOLDINGS CO., LTD.
Reel/Frame 020121/0161 →