Flow method and reactor for manufacturing noncrystals

1. A method of manufacturing a population of nanocrystals, comprising:

transporting alternating gas and liquid volumes through a flow path, the liquid volume including a nanocrystal precursor;

heating the alternating gas and liquid volumes to a temperature for a time sufficient to grow a nanocrystal; and

cooling the alternating gas and liquid volumes to form the population of nanocrystals.

2. The method of claim 1 , wherein the nanocrystal precursor includes an M-source and an X donor.

3. The method of claim 2 , wherein the M-source is an M-containing salt.

4. The method of claim 2 , wherein M is Cd, Zn, Mg, Hg, Al, Ga, In, or Tl and X is O, S, Se, Te, N, P, As, or Sb.

5. The method of claim 1 , wherein the nanocrystal precursor includes an amine.

6. The method of claim 5 , wherein the amine is a primary amine.

7. The method of claim 1 , further comprising introducing the liquid into the flow path and introducing the gas into the flow path.

8. The method of claim 3 , wherein the M-containing salt is a halide, carboxylate, carbonate, hydroxide, or diketonate.

9. The method of claim 3 , wherein the M-containing salt is cadmium acetylacetonate, cadmium iodide, cadmium bromide, cadmium chloride, cadmium hydroxide, cadmium carbonate, cadmium acetate, cadmium oxide, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc hydroxide, zinc carbonate, zinc acetate, zinc oxide, magnesium acetylacetonate, magnesium iodide, magnesium bromide, magnesium chloride, magnesium hydroxide, magnesium carbonate, magnesium acetate, magnesium oxide, mercury acetylacetonate, mercury iodide, mercury bromide, mercury chloride, mercury hydroxide, mercury carbonate, mercury acetate, aluminum acetylacetonate, aluminum iodide, aluminum bromide, aluminum chloride, aluminum hydroxide, aluminum carbonate, aluminum acetate, gallium acetylacetonate, gallium iodide, gallium bromide, gallium chloride, gallium hydroxide, gallium carbonate, gallium acetate, indium acetylacetonate, indium iodide, indium bromide, indium chloride, indium hydroxide, indium carbonate, indium acetate, thallium acetylacetonate, thallium iodide, thallium bromide, thallium chloride, thallium hydroxide, thallium carbonate, or thallium acetate.

10. The method of claim 9 , wherein the X donor includes a phosphine chalcogenide, a bis(silyl) chalcogenide, dioxygen, an ammonium salt, or a tris(silyl) pnictide.

11. The method of claim 1 , wherein the flow path includes a first region configured to generate recirculation in at least one of the liquid volumes.

12. The method of claim 11 , wherein the first region includes a meandering section.

13. The method of claim 11 , wherein the flow path includes a second region associated with a thermal source configured to heat the alternating gas and liquid volumes to the temperature sufficient to grow the nanocrystal.

14. The method of claim 13 , wherein the flow path includes a third region configured to cool the alternating gas and liquid volumes.

15. The method of claim 12 , wherein the second region has a length and the transporting is at a rate sufficient to create a residence time within the second region of between 10 and 300 seconds.

16. The method of claim 1 , further comprising introducing the liquid into the flow path, and introducing the gas into the flow path, each being introduced at a temperature cooler than the temperature sufficient to grow the nanocrystal.

17. The method of claim 1 , wherein the population of nanocrystals has an emission having a full width at half maximum of less than 30 nm.

18. The method of claim 1 , further comprising introducing an additive while heating the alternating gas and liquid volumes to the temperature for the time sufficient to grow the nanocrystal.

19. The method of claim 1 , further comprising sampling at least one of the liquid volumes while heating the alternating gas and liquid volumes to the temperature for the time sufficient to grow the nanocrystal.

20. The method of claim 19 , wherein sampling includes monitoring an emission or absorbance from the liquid volume.

21. The method of claim 19 , wherein sampling includes removing a portion of the liquid volumes from the flow path.

22. The method of claim 1 , further comprising:

transporting alternating gas and liquid volumes through a second flow path; and

growing an overcoating of material on each of the plurality of nanocrystals.

23. The method of claim 1 , wherein the flow path is a portion of a microfabricated device.

24. A method of manufacturing a population of nanocrystals, comprising:

transporting alternating gas and liquid volumes through a flow path for a residence time to form the population of nanocrystals, the population of nanocrystals being monodisperse over a two-fold range of residence times.

25. The method of claim 24 , wherein the population of nanocrystals is monodisperse over a three-fold range of residence times.

26. The method of claim 24 , wherein the population of nanocrystals is monodisperse over a four-fold range of residence times.

27. A method of overcoating a nanocrystal, comprising:

introducing a nanocrystal and overcoating reagents into a flow path;

transporting the nanocrystal and the overcoating reagents through the flow path;

heating the nanocrystal and overcoating reagents to a temperature and for a time sufficient to grow an overcoating on the nanocrystal; and

cooling the nanocrystal.

28. The method of claim 27 , further comprising transporting alternating gas and liquid volumes through the flow path.

29. The method of claim 27 , further comprising colloidally growing the nanocrystal prior to introducing the nanocrystal into the flow path.