Dual gate oxide one time programmable (OTP) antifuse cell
View Patent ↗A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.
1. An apparatus, comprising:
a one-time programmable cell having:
an access transistor;
an antifuse element coupled to the access transistor, wherein the access transistor includes a gate having a gate oxide thickness and the antifuse element includes a gate having gate oxide thickness, wherein the gate oxide thickness of the access transistor is greater than the gate oxide thickness of the antifuse element;
a word line coupled to a gate of the access transistor;
a bit line coupled to a source of the access transistor; and
a program line coupled to a source and a drain of the antifuse transistor, wherein a drain of the access transistor is coupled to the gate of the antifuse element.
2. The apparatus of claim 1 , wherein the access transistor is to couple a first voltage to the gate of the antifuse element and the program line is to couple a second voltage to the source and/or drain of the antifuse element, and wherein application of the first and the second voltages to the antifuse element is to cause the gate oxide of the antifuse element to break down.
3. The apparatus of claim 2 , wherein application of a third voltage to the drain of the access transistor and the gate of the antifuse element caused by breakdown of the gate oxide of the antifuse element is insufficient to cause the breakdown of the gate oxide of the access transistor.
4. The apparatus of claim 1 , wherein the antifuse element comprises a metal oxide semiconductor field effect transistor (MOSFET).
5. A method, comprising:
programming a one time programmable cell by:
applying a first voltage on a bit line coupled to a source of an access transistor;
applying a second voltage to a word line coupled to a gate of the access transistor, wherein a difference in potential across the gate and the source of the access transistor caused by the first and the second voltages, respectively, results in a third voltage being present on a drain of the access transistor and on a gate of an antifuse element; and
applying a fourth voltage to a program line coupled to a source and to a drain of the antifuse element, wherein a difference in potential across the gate and the source of the antifuse element caused by the third and the fourth voltages, respectively, is sufficient to cause a gate oxide in the antifuse element to breakdown and is insufficient to cause a gate oxide in the access transistor to breakdown.
6. The method of claim 5 , further comprising applying a fifth voltage to the drain of the access transistor and the gate of the antifuse element caused by breakdown of the gate oxide of the antifuse element.
7. The method of claim 6 , wherein a difference in potential across the gate and the drain of the access transistor caused by the second voltage and a fifth voltage, respectively, is insufficient to cause a gate oxide in the access transistor to breakdown.
8. The method of claim 5 , further comprising sensing a voltage on the bit line.
9. An apparatus, comprising:
a first word line and a second word line coupled to gates of access transistors in a first row of cells and a second row of cells, respectively, of an array of one-time programmable cells;
a first bit line and a second bit line coupled to sources of access transistors in a first column of cells and a second column of cells, respectively, of the array of one-time programmable cells; and
a first program line and a second program line coupled to sources and drains of antifuse elements in the first and second columns, respectively, of the array of one-time programmable cells, wherein the access transistors and antifuse elements in the array include gate oxide thicknesses, wherein the gate oxide thicknesses of the access transistors are greater than the gate oxide thicknesses of the antifuse elements.
10. The apparatus of claim 9 , wherein a combination of a first voltage applied to the first word line, a second voltage applied to the first bit line, and a third voltage applied to the first program line causes the cell located in the first column, first row to be programmed.
11. The apparatus of claim 10 , wherein the combination of the first voltage applied to the first word line, the second voltage applied to the first bit line, and the third voltage applied to the first program line is insufficient to cause the cell located in the first row and the second column to be programmed.
12. The apparatus of claim 10 , wherein the combination of the first voltage applied to the first word line, the second voltage applied to the first bit line, and the third voltage applied to the first program line is insufficient to cause the cell located in the second row and the first column to be programmed.
13. The apparatus of claim 10 , wherein the combination of the first voltage applied to the first word line, the second voltage applied to the first bit line, and the third voltage applied to the first program line is insufficient to cause the cell located in the second row and the second column to be programmed.
14. An apparatus, comprising:
a first word line and a second word line coupled to gates of access transistors in a first row of cells and a second row of cells, respectively, of an array of one-time programmable cells;
a first bit line and a second bit line coupled to sources of access transistors in a first column of cells and a second column of cells, respectively, of the array of one-time programmable cells; and
a first program line and a second program line coupled to sources and drains of antifuse elements in the first and second rows, respectively, of the array of one-time programmable cells, wherein the access transistors and antifuse elements in the array include gate oxide thicknesses, wherein the gate oxide thicknesses of the access transistors are greater than the gate oxide thicknesses of the antifuse elements.
15. The apparatus of claim 14 , wherein a combination of a first voltage applied to the first word line, a second voltage applied to the first program line, and a third voltage applied to the first and the second bit lines causes the cells located in the first column, first row and in the second column, first row to be programmed.
16. The apparatus of claim 14 , wherein the combination of the first voltage applied to the first word line, the second voltage applied to the first program line, and the third voltage applied to the first and the second bit lines is insufficient to cause the cells located in the second row to be programmed.
17. A system, comprising:
an integrated circuit having a one-time programmable cell having an access transistor and an antifuse element coupled to the access transistor, wherein the access transistor includes a gate having a gate oxide thickness and the antifuse element includes a gate having gate oxide thickness, wherein the gate oxide thickness of the access transistor is greater than the gate oxide thickness of the antifuse element, wherein a word line is coupled to a gate of the access transistor, a bit line is coupled to a source of the access transistor, and a program line is coupled to a source and a drain of the antifuse transistor, and a drain of the access transistor is coupled to the gate of the antifuse element; and
a graphics controller coupled to the integrated circuit.
18. The apparatus of claim 17 , wherein the integrated circuit is a processor.
19. The system of claim 17 , wherein the antifuse element is a metal oxide semiconductor field effect transistor (MOSFET).