Storage element and memory including a storage layer a magnetization fixed layer and a drive layer
A memory includes a storage element ( 10 ) composed of a storage layer ( 5 ) for holding information with the magnetization state of a magnetic material, a magnetization fixed layer ( 3 ) provided relative to the storage layer ( 5 ) through an intermediate layer ( 4 ), the magnetization of the storage layer ( 5 ) being changed with application of an electric current to the laminated layer direction to record information on the storage layer ( 5 ) and a drive layer ( 7 ) provided relative to the storage layer ( 5 ) through a nonmagnetic layer ( 6 ), the magnetic direction thereof being substantially fixed to the laminated layer direction and an electric current supplying means for applying an electric current to the storage element ( 10 ) along the laminated layer direction, wherein contents of information to be recorded are changed during a time period in which an electric current is supplied from the electric current supplying means to the storage element ( 10 ).
1. An information storage element comprising:
a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;
a magnetization fixed layer;
an intermediate layer between the storage layer and the magnetization fixed layer,
a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction; and
a non-magnetic layer between the drive layer and the storage layer.
2. A storage element according to claim 1 , wherein said intermediate layer is a tunnel insulating layer and said nonmagnetic layer is a nonmagnetic conductive layer.
3. An information storage element, comprising:
a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;
a magnetization fixed layer;
an intermediate layer between the storage layer and the magnetization fixed layer;
a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction; and
a non-magnetic layer between the drive layer and the storage layer wherein,
said drive layer is comprises a first magnetic layer and a second magnetic layer, wherein,
the first magnetic layer comnrises a material with a high spin polarizability and is between the storage layer and the second magnetic layer; and
the second magnetic layer comprises a material with a large vertical.
4. A memory comprising:
(a) a storage element comprising:
a storage layer comprising a magnetic material, wherein the magnetization of the storage layer changes when an electric current in a laminated layer direction is applied to the storage layer;
a magnetization fixed layer;
an intermediate layer between the storage layer and the magnetization fixed layer;
a drive layer, the magnetic direction of the drive layer being substantially fixed to the laminated layer direction;
a non-magnetic layer between the drive layer and the storage layer; and
(b) electric current supplying means for applying an electric current to said storage element along said laminated layer direction, wherein contents of information to be recorded are changed a duration of time in which an electric current is supplied from said electric current supplying means to said storage element.
5. A memory according to claim 4 , wherein said electric current applied from said electric current supplying means to said storage element has only one polarity when information is recorded.