Semiconductor device
View Patent ↗On a silicon substrate 120 of a semiconductor device, a field oxide film 101 is provided. On the field oxide film 101 , two fuses 104 are provided. Directly below the fuses 104 in the silicon substrate 120 , an n-type well 102 is provided. Besides the n-type well 102 , a p-type well 103 is provided in such a manner as to surround a region directly under the fuses 104 in the silicon substrate 120 . A cover insulating film 108 is provided over the silicon substrate 120 and the field oxide film 101 . A seal ring composed of a contact 106 and an interconnection 107 is embedded in the cover insulating film 108 so as to surround the fuses 104.
1. A semiconductor device comprising:
a p-type semiconductor substrate;
a field oxide film embedded in said p-type semiconductor substrate;
a fuse provided on said field oxide film;
a single n-type well provided directly below said fuse in said p-type semiconductor substrate, wherein said single n-type well is provided only below a lowest most surface of the field oxide film and completely within a vertical boundary defined by each end of said field oxide film;
a p-type well provided in such a manner as to surround a region directly under said fuse in said p-type semiconductor substrate and having a larger impurity concentration than an impurity concentration of said p-type semiconductor substrate;
a first insulating layer and a second insulating layer in this order stacked over said p-type semiconductor substrate and said field oxide film;
a seal ring embedded in said first insulating layer and said second insulating layer so as to surround said fuse; and
an opening provided over said single n-type well so as to expose the first insulating layer,
wherein said first insulating layer covers an upper surface of said fuse,
wherein said p-type well is in contact with a lower surface of said seal ring, and
said single n-type well and said p-type well being free of an impurity layer therebetween.
2. The semiconductor device according to claim 1 ,
wherein said single n-type well is in contact with a lower surface of said field oxide film.
3. The semiconductor device according to claim 1 ,
wherein said field oxide film is an element separation film embedded on an element formation surface side of said p-type semiconductor substrate.
4. The semiconductor device according to claim 1 , wherein said field oxide film is a single insulating layer.
5. The semiconductor device according to claim 4 , wherein said single insulating layer is comprised of a SiO 2 film.
6. The semiconductor device according to claim 1 , wherein said p-type well and said single n-type well extend to a same depth in said p-type semiconductor substrate.
7. The semiconductor device of claim 1 , wherein,
the fuse has an overall elongated structure with two ends with an interconnection connected to each end of each fuse, the fuse made of a film shaped to have a narrow midsection configured to be melted by laser irradiation to disconnect the interconnections,
the p-type well contacting with side surfaces of said field oxide film and provided so as to surround a region directly under said fuse in said p-type semiconductor substrate, a bottom of said p-type well extends below a horizontal plane created by a lowest most surface of said field oxide film embedded in said p-type semiconductor substrate, and
said single n-type well and said p-type well are laterally spaced apart below the lowermost surface of the first insulating layer and so that only the p-type semiconductor substrate occupies the lateral space between said single n-type well and said p-type well.
8. The semiconductor device of claim 1 , wherein, said single n-type well and said p-type well being laterally spaced apart from each other by a portion of said p-type semiconductor substrate located laterally between said single n-type well and said p-type well.
9. A semiconductor device comprising:
a p-type semiconductor substrate;
a field oxide film embedded in said p-type semiconductor substrate;
a fuse provided on said field oxide film;
a p-type well provided so as to surround a region directly under said fuse in said p-type semiconductor substrate and having a larger impurity concentration than an impurity concentration of said p-type semiconductor substrate, a bottom of said p-type well extends below a horizontal plane created by a lowest most surface of said field oxide film embedded in said p-type semiconductor substrate;
a first insulating layer and a second insulating layer in this order stacked over said p-type semiconductor substrate and said field oxide film;
a seal ring embedded in said first insulating layer and said second insulating layer so as to surround said fuse;
a single n-type well provided directly below said fuse in said p-type semiconductor substrate; and
an opening provided over said single n-type well so as to expose the first insulating layer,
wherein said first insulating layer covers an upper surface of said fuse,
wherein said p-type well is in contact with a lower surface of said seal ring, and
said single n-type well and said p-type well being free of an impurity layer therebetween.
10. The semiconductor device according to claim 9 ,
wherein said field oxide film is an element separation film embedded on an element formation surface side of said p-type semiconductor substrate.
11. The semiconductor device according to claim 9 , wherein a top portion of said p-type well only comes into contact with said field oxide film on an outer periphery of said field oxide film.
12. The semiconductor device of claim 9 , wherein, said single n-type well and said p-type well being laterally spaced apart from each other by a portion of said p-type semiconductor substrate located laterally between said single n-type well and said p-type well.
13. A semiconductor device comprising:
a n-type semiconductor substrate;
a field oxide film embedded in said n-type semiconductor substrate;
a fuse provided on said field oxide film;
a single n-type well provided directly below said fuse in said n-type semiconductor substrate and having a larger impurity concentration than an impurity concentration of said n-type semiconductor substrate, said single n-type well is provided only below a lowest most surface of the field oxide film and completely within a vertical boundary defined by each end of said field oxide film;
a p-type well provided in such a manner as to surround a region directly under said fuse in said n-type semiconductor substrate;
a first insulating layer and a second insulating layer in this order stacked over said n-type semiconductor substrate and said field oxide film;
a seal ring embedded in said first insulating layer and said second insulating layer so as to surround said fuse; and
an opening provided over said single n-type well so as to expose said first insulating layer,
wherein said first insulating layer covers an upper surface of said fuse,
wherein said p-type well is in contact with a lower surface of said seal ring, and
said single n-type well and said p-type well being free of an impurity layer therebetween.
14. The semiconductor device according to claim 13 , wherein said single n-type well is in contact with a lower surface of said field oxide film.
15. The semiconductor device according to claim 13 , wherein said field oxide film is an element separation film embedded on an element formation surface side of said n-type semiconductor substrate.
16. The semiconductor device according to claim 13 , wherein said field oxide film is a single insulating layer.
17. The semiconductor device according to claim 16 , wherein said single insulating layer is comprised of a SiO 2 film.
18. The semiconductor device according to claim 13 , wherein said p-type well and said single n-type well extend to a same depth in said n-type semiconductor substrate.
19. The semiconductor device of claim 13 , wherein,
the fuse has an overall elongated structure with two ends with an interconnection connected to each end of each fuse, the fuse made of a film shaped to have a narrow midsection configured to be melted by laser irradiation to disconnect the interconnections,
the p-type well contacting with side surfaces of said field oxide film and provided so as to surround a region directly under said fuse in said n-type semiconductor substrate, a bottom of said p-type well extends below a horizontal plane created by a lowest most surface of said field oxide film embedded in said n-type semiconductor substrate, and
said single n-type well and said p-type well are laterally spaced apart below the lowermost surface of the first insulating layer and so that only the n-type semiconductor substrate occupies the lateral space between said single n-type well and said p-type well.
20. The semiconductor device of claim 13 , wherein, said single n-type well and said p-type well being laterally spaced apart from each other by a portion of said n-type semiconductor substrate located laterally between said single n-type well and said p-type well.