Stiffener for flip chip BGA package
View Patent ↗Provided are semiconductor die flip chip packages with warpage control and fabrication methods for such packages. A package includes a heat spreader that is attached to a die and a stiffener, which are in turn attached to a package substrate. In general, the stiffener is made of a material that has a relatively low CTE value. For example, the stiffener material may have a CTE value less than 12 ppm/° C. The material may also have a relatively low mass density value of less than 8.9 g/cm 3 . Such a material may include natural graphite or some composite form of it. The result is a package with less bowing and so improved co-planarity (e.g., in compliance with industry specifications) with the surface to which it is ultimately bound; thereby, improving the reliability of the package. Moreover, a package that is relatively lighter and more robust than conventional semiconductor die flip chip packages can be realized.
1. A semiconductor device package, comprising:
a package substrate;
a flip chip die coupled to the package substrate;
a stiffener, coupled to the package substrate, and positioned laterally around the periphery of the die so that a surface of the die is exposed, wherein the stiffener is composed of a graphite material having a first CTE value sufficient to absorb or redistribute stresses caused by thermal mismatches between the die and the substrate; and
a separate thermally conductive heat spreader having a second CTE value greater than the first CTE value and attached to the stiffener and the exposed surface of the die.
2. The semiconductor device package of claim 1 , wherein the CTE value for the stiffener material is less than 5 ppm/° C.
3. The semiconductor device package of claim 1 , wherein the stiffener material has a mass density value less than 8.9 g/cm 3 .
4. The semiconductor device package of claim 1 , wherein the stiffener includes a heat spreader surface and a package surface, the package surface being used to couple the stiffener to the package substrate.
5. The semiconductor device package of claim 4 , wherein the heat spreader is also coupled to the heat spreader surface of the stiffener.
6. The semiconductor device package of claim 1 , wherein the stiffener comprises a window in its center to clear the die.
7. The semiconductor device package of claim 1 , wherein the stiffener surrounds the die.
8. A semiconductor device package, comprising:
a package substrate;
a flip chip die coupled to the package substrate;
a stiffener made from a graphite material, coupled to the package substrate, and having a recess region to accommodate the die and four sides positioned laterally around the die so that a surface of the die is exposed through the recess region, wherein the stiffener is composed of a material having a first CTE value; and
a separate thermally conductive heat spreader having a second CTE value which is higher than the first CTE value and attached to the stiffener and the exposed surface of the die.
9. A semiconductor device package, comprising:
a package substrate;
a flip chip die coupled to the package substrate;
a graphite stiffener, coupled to the package substrate, and having a recess region to accommodate the die and four sides positioned laterally around the die so that a surface of the die is exposed through the recess region, wherein the stiffener is composed of a material having a CTE value less than 12 ppm/° C. and a thermal conductivity value greater than 300 W/mK; and
a separate thermally conductive heat spreader in contact with the die and the four sides of the stiffener and having a CTE value greater than the stiffener.
10. A method for packaging a semiconductor device, comprising:
providing a package substrate;
coupling a flip chip die to the package substrate;
coupling a graphite stiffener to the package substrate having a recess region to accommodate the die and four sides around the periphery of the die so that a surface of the die is exposed through the recess region, wherein the stiffener is positioned laterally around the die within the recess region and composed of a material having a CTE value sufficient to absorb or redistribute stresses caused by thermal mismatches between the die and the substrate; and
coupling a separate thermally conductive heat spreader having a second CTE value greater than the first CTE value to the stiffener and the exposed surface of the die.
11. The method of claim 10 , wherein the CTE value for the stiffener material is about −2.4 ppm/° C.
12. The method of claim 10 , wherein the stiffener material has a modulus value less than 129 GPa.
13. The method of claim 12 , wherein the stiffener material has a mass density value less than 8.9 g/cm 3 .
14. The method of claim 10 , wherein the stiffener includes a heat spreader surface and a package surface, wherein coupling the stiffener to the substrate comprises:
coupling the package surface of the stiffener to the package substrate.
15. A method for packaging a semiconductor device, comprising:
providing a package substrate, wherein the package substrate includes a core with a thickness between 800 and 1000 microns;
coupling a flip chip die to the package substrate;
coupling a graphite stiffener to the package substrate, wherein the stiffener is positioned laterally around the die so that a surface of the die is exposed and composed of a material having a CTE value less than 12 ppm/° C.; and
coupling a separate thermally conductive heat spreader to the stiffener and the exposed surface of the die, wherein the heat spreader has a CTE value greater than the stiffener.
16. A semiconductor device package, comprising:
a package substrate, wherein the package substrate includes a core with a thickness between 800 and 1000 microns;
a flip chip die coupled to the package substrate; and
a graphite stiffener positioned laterally around the die so that a surface of the die is exposed, the stiffener having a CTE sufficient for substantially controlling the co-planarity of the semiconductor device package.