Methods and apparatus for sputtering
View Patent ↗A method of sputtering with sputtering apparatus is for depositing a layer upon a substrate. The apparatus includes a sputter target with a face exposed to the substrate and a magnetron providing a magnetic field that moves relative to the target face. The speed of movement of the field is controlled such that the uniformity of the deposition on the substrate is enhanced. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed. The selected speed may vary over the life of the target, with increased speeds becoming desirable as the target thins.
1. A method of sputtering comprising:
correlating respective magnetic motor frequencies of a magnetron relative to a sputter target with respective deposition thickness uniformity percentages to which a material will be deposited uniformly in thickness on a substrate during a sputtering process by:
(a) changing a magnetic motor frequency of the magnetron relative to the sputter target over a range of magnetic motor frequencies while carrying out a process of sputtering the sputter target; and
(b) monitoring the uniformity of a result of the sputtering of the sputter target during the time the magnetic motor frequency is changed relative to the sputter target of the range of magnetic motor frequencies; and
processing the substrate, using the magnetron, to deposit material on the substrate including by producing a magnetic field that moves relative to a surface of the sputter target, and
controlling a rotational speed of the magnetron based on said correlating to regulate a speed of movement of the magnetic field relative to the sputter target such that a desired degree of uniformity of deposition thickness on the substrate is provided, and
wherein the magnetron is situated behind the sputter target with respect to the sputter target being processed, and
the controlling comprises changing the frequency at which the surface of the sputter target is swept by the magnetic field produced by the magnetron, and varying the power speed of movement of the magnetic field in accordance with the accumulated power of the sputter target.
2. A method as claimed in claim 1 wherein the rotational speed is controlled to maximise the uniformity of deposition across a surface of the substrate.
3. A method as claimed in claim 1 wherein steps (a) and (b) are performed in real time during the processing of the at least one substrate.
4. A method as claimed in claim 1 wherein steps (a) and (b) are performed over the lifetime of the target.
5. A method as claimed in claim 1 wherein the controlling comprises regulating the rotational speed to one which is associated with a minimum degree of non-uniformity of deposition or a maximum degree of uniformity of deposition in the correlation.
6. A method as claimed in claim 1 wherein the speed of movement lies between 0.33 Hz and 8.33 Hz.
7. A method as claimed in claim 1 wherein the target is aluminium and the processing of the at least one substrate comprises depositing a film of aluminium nitride on the substrate.
8. A method as claimed in claim 1 wherein the target is molybdenum.
9. A method as claimed in claim 1 wherein the controlling comprises increasing the speed of movement of the field during the operational lifetime of the target.
10. A method of sputtering comprising:
correlating respective magnetic motor frequencies of a magnetron relative to a sputter target with respective deposition thickness uniformity percentages to which a material will be deposited uniformly in thickness on a substrate during a sputtering process; and
processing at least one substrate, using the magnetron, to deposit material on the at least one substrate including by producing a magnetic field that scans a face of the sputter target, and
controlling the magnetron based on said correlating to regulate a scanning speed of the magnetic field relative to the face of the sputter target such that a desired degree of uniformity of deposition thickness on the substrate is provided,
wherein the magnetron is situated behind the sputter target with respect to the sputter target being processed,
the correlating comprises:
(a) changing a magnetic motor frequency of the magnetron relative to the sputter target over a range of magnetic motor frequencies while carrying out a process of sputtering the sputter target, and
(b) monitoring the uniformity of a result of the sputtering of the sputter target during the time the magnetic motor frequency is changed relative to the sputter target, and
steps (a) and (b) are performed in real time during the processing of the at least one substrate, and
the controlling comprises varying the speed of movement of the magnetic field in accordance with accumulated power of the sputter target.
11. A method of sputtering comprising:
correlating respective magnetic motor frequencies of a magnetron relative to a sputter target with respective deposition thickness uniformity percentages to which a material will be deposited uniformly in thickness on a substrate during a sputtering process; and
processing at least one substrate, using the magnetron, to deposit material on the at least one substrate including by producing a magnetic field that scans a face of the sputter target, and
controlling the magnetron based on said correlating to regulate a scanning speed of the magnetic field relative to the face of the sputter target such that a desired degree of uniformity of deposition thickness on the substrate is provided,
wherein the magnetron is situated behind the sputter target with respect to the sputter target being processed,
the correlating comprises:
(a) changing a magnetic motor frequency of the magnetron relative to the sputter target over a range of magnetic motor frequencies while carrying out a process of sputtering the sputter target, and
(b) monitoring the uniformity of a result of the sputtering of the sputter target during the time the magnetic motor frequency is changed relative to the sputter target, and
steps (a) and (b) are performed over the lifetime of the target, and
the controlling comprises varying the speed of movement of the magnetic field in accordance with the accumulated power of the sputter target.