Diode having high brightness and method thereof
View Patent ↗A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
1. A light emitting diode comprising:
a substrate;
an n-type layer on a first surface of the substrate;
an active layer on the n-type layer;
a p-type layer on the active layer;
a first electrode contacting the p-type layer;
a second electrode contacting the n-type layer; and
a reflective layer on a second surface of the substrate
wherein a surface roughness of at least one portion of an interface between the reflective layer and the second surface of the substrate is less than 15 nm.
2. The light emitting diode according to claim 1 , wherein the reflective layer is on a surface of the substrate and able to reflect photons from the active layer.
3. The light emitting diode according to claim 1 , wherein the reflective layer substantially entirely covers the second surface of the substrate.
4. The light emitting diode according to claim 1 , wherein the reflective layer has sufficient reflectivity to reflect light from the active layer.
5. The light emitting diode according to claim 1 , wherein the reflective layer is on a side of the substrate facing away from the active layer.
6. The light emitting diode according to claim 1 , wherein the reflective substantially entirely covers the side of the substrate facing away from the active layer.
7. The light emitting diode according to claim 1 , wherein the reflective layer is directly on the substrate.
8. The light emitting diode according to claim 1 . wherein the reflective layer includes aluminum.
9. The light emitting diode according to claim 8 , wherein the aluminum has a concentration of about 99.999% or higher.
10. The light emitting diode according to claim 1 , wherein the substrate includes a first transparent layer and a second transparent layer on the first transparent layer.
11. The light emitting diode according to claim 10 , wherein the first transparent layer includes sapphire and the second transparent layer includes a buffer layer.
12. The light emitting diode according to claim 11 , wherein the buffer layer includes GaN.
13. The light emitting diode according to claim 1 , further comprising a package housing the light emitting diode.
14. The light emitting diode according to claim 1 , wherein the substrate includes sapphire.
15. The light emitting diode according to claim 1 , wherein the substrate has a thickness of 350-430 μm.
16. The light emitting diode according to claim 1 , wherein the substrate has a thickness of less than 350 μm.
17. The light emitting diode according to claim 1 , wherein the substrate has a thickness of less than 120 μm.
18. The light emitting diode according to claim 1 , wherein the active layer includes at least one of a quantum well layer and a double hetero structure.
19. The light emitting diode according to claim 18 , wherein the quantum layer includes a multiple quantum layer.
20. The light emitting diode according to claim 1 , wherein an average surface roughness of the interface between the reflective layer and the second surface of the substrate is less than 15 nm.
21. The light emitting diode according to claim 1 , wherein the surface roughness of at least one portion of the interface between the reflective layer and the second surface of the substrate is 5 nm and less.