Pattern formation method
View Patent ↗In a pattern formation method, a resist film is formed on a substrate and a barrier film including a plasticizer is then formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Subsequently, after the pattern exposure, the resist film is developed after removing the barrier film, so as to form a resist pattern in a good shape without producing residues.
1. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming a barrier film including a base polymer and a plasticizer on said resist film;
performing pattern exposure by selectively irradiating said resist film through said barrier film with exposing light with a liquid provided on said barrier film;
removing said barrier film;
forming, after the pattern exposure, a resist pattern made of said resist film by developing said resist film after removing said barrier film; and
annealing said barrier film before the step of performing pattern exposure.
2. The pattern formation method of claim 1 ,
wherein said plasticizer is phthalate ester, adipate ester, azelate ester, sebacate ester, phosphate ester, trimellitate ester, citrate ester, epoxy, or chlorinated paraffin.
3. The pattern formation method of claim 2 ,
wherein said phthalate ester is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, di-2-ethylhexyl phthalate, di-n-octyl phthalate, diisononyl phthalate, dinonyl phthalate, diisodecyl phthalate or butyl benzyl phthalate,
said adipate ester is dioctyl adipate or diisononyl adipate,
said azelate ester is dioctyl azelate,
said sebacate ester is dibutyl sebacate or dioctyl sebacate,
said phosphate ester is tricresyl phosphate,
said trimellitate ester is trioctyl trimellitate,
said citrate ester is acetyl tributyl citrate, and
said epoxy is epoxidized soybean oil.
4. The pattern formation method of claim 1 ,
wherein said liquid is water or an acidic solution.
5. The pattern formation method of claim 4 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
6. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, Xe2 laser, ArF excimer laser, F2 laser, KrAr laser or Ar2 laser.
7. The pattern formation method of claim 1 ,
wherein said plasticizer includes an ester bond.
8. The pattern formation method of claim 1 ,
wherein an amount of said plasticizer is not less than 0.1 wt%, and not more than 30 wt % based on said base polymer.
9. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming a barrier film including a base polymer and a plasticizer on said resist film;
performing pattern exposure by selectively irradiating said resist film through said barrier film with exposing light with a liquid provided on said barrier film;
removing said barrier film and forming a resist pattern made of said resist film by developing said resist film after the pattern exposure; and
annealing said barrier film before the step of performing pattern exposure.
10. The pattern formation method of claim 9 ,
wherein said plasticizer is phthalate ester, adipate ester, azelate ester, sebacate ester, phosphate ester, trimellitate ester, citrate ester, epoxy, or chlorinated paraffin.
11. The pattern formation method of claim 10 ,
wherein said phthalate ester is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, di-2-ethyihexyl phthalate, di-n-octyl phthalate, diisononyl phthalate, dinonyl phthalate, diisodecyl phthalate or butyl benzyl phthalate,
said adipate ester is dioctyl adipate or diisononyl adipate,
said azelate ester is dioctyl azelate,
said sebacate ester is dibutyl sebacate or dioctyl sebacate,
said phosphate ester is tricresyl phosphate,
said trimellitate ester is trioctyl trimellitate,
said citrate ester is acetyl tributyl citrate, and
said epoxy is epoxidized soybean oil.
12. The pattern formation method of claim 9 ,
wherein said liquid is water or an acidic solution.
13. The pattern formation method of claim 12 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
14. The pattern formation method of claim 9 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
15. The pattern formation method of claim 9 ,
wherein said plasticizer includes an ester bond.
16. The pattern formation method of claim 9 ,
wherein an amount of said plasticizer is not less than 0.1 wt %, and not more than 30 wt % based on said base polymer.
17. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming a barrier film including a base polymer, a plasticizer, and an alcohol solvent on said resist film;
performing pattern exposure by selectively irradiating said resist film through said barrier film with exposing light with a liquid provided on said barrier film;
removing said barrier film with an alcohol solution;
forming, after the pattern exposure, a resist pattern made of said resist film by developing said resist film after removing said barrier film; and
annealing said barrier film before the step of performing pattern exposure.
18. The pattern formation method of claim 17 ,
wherein said plasticizer is phthalate ester, adipate ester, azelate ester, sebacate ester, phosphate ester, trimellitate ester, citrate ester, epoxy, or chlorinated paraffin.
19. The pattern formation method of claim 18 ,
wherein said phthalate ester is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, di-2-ethylhexyl phthalate, di-n-octyl phthalate, diisononyl phthalate, dinonyl phthalate, diisodecyl phthalate or butyl benzyl phthalate,
said adipate ester is dioctyl adipate or diisononyl adipate,
said azelate ester is dioctyl azelate,
said sebacate ester is dibutyl sebacate or dioctyl sebacate,
said phosphate ester is tricresyl phosphate,
said trimellitate ester is trioctyl trimellitate,
said citrate ester is acetyl tributyl citrate, and
said epoxy is epoxidized soybean oil.
20. The pattern formation method of claim 17 ,
wherein alcohol included in said alcohol solution is methanol, ethanol, isopropyl alcohol, isobutyl alcohol, n-butyl alcohol, isoamyl alcohol, n-amyl alcohol or n-hexyl alcohol.
21. The pattern formation method of claim 17 ,
wherein said liquid is water or an acidic solution.
22. The pattern formation method of claim 21 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
23. The pattern formation method of claim 17 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
24. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming a barrier film including an alkali-soluble polymer on said resist film;
performing pattern exposure by selectively irradiating said resist film through said barrier film with exposing light with a liquid provided on said barrier film;
removing said barrier film with a warmed alkaline aqueous solution;
forming, after the pattern exposure, a resist pattern made of said resist film by developing said resist film after removing said barrier film; and
annealing said barrier film before the step of performing pattern exposure.
25. The pattern formation method of claim 24 ,
wherein said barrier film includes a plasticizer.
26. The pattern formation method of claim 25 ,
wherein said plasticizer is phthalate ester, adipate ester, azelate ester, sebacate ester, phosphate ester, trimellitate ester, citrate ester, epoxy, or chlorinated paraffin.
27. The pattern formation method of claim 26 , wherein said phthalate ester is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, di-2-ethyihexyl phthalate, di-n-octyl phthalate, diisononyl phthalate, dinonyl phthalate, diisodecyl phthalate or butyl beuzyl phthalate,
said adipate ester is dioctyl adipate or diisononyl adipate,
said azelate ester is dioctyl azelate,
said sebacate ester is dibutyl sebacate or dioctyl sebacate,
said phosphate ester is tricresyl phosphate,
said trimellitate ester is trioctyl trimellitate,
said citrate ester is acetyl tributyl citrate, and
said epoxy is epoxidized soybean oil.
28. The pattern formation method of claim 24 ,
wherein a temperature of said warmed alcohol aqueous solution is not less than room temperature.
29. The pattern formation method of claim 24 ,
wherein said alkaline aqueous solution is a tetramethylammonium hydroxide aqueous solution, a tetraethylammonium hydroxide aqueous solution or a choline aqueous solution.
30. The pattern formation method of claim 24 ,
wherein said liquid is water or an acidic solution.
31. The pattern formation method of claim 30 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
32. The pattern formation method of claim 24 , wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.