Method of forming shallow doped junctions having a variable profile gradation of dopants
View Patent ↗Disclosed are methods for forming a shallow junction with a variable concentration profile gradation of dopants. The process of the present invention includes first providing and masking a surface on an in-process integrated circuit wafer on which the shallow junction is to be formed. Next, a low ion velocity and low energy ion bombardment plasma doping or PLAD operation is conducted to provide a highly doped inner portion of a shallow junction. In a further step, a higher ion velocity and energy conventional ion bombardment implantation doping operation is conducted using a medium power implanter to extend the shallow junction boundaries with a lightly doped outer portion. In various embodiments, the doping steps can be performed in reverse order. In addition, an anneal step can be performed after any doping operation.
1. A method of forming an electrical structure on a substrate, comprising:
performing a first doping operation on a substrate, the first doping operation comprising depositing dopants to a first depth within the substrate to form a first doped region, wherein the first doped region has a lower periphery that is substantially planar and substantially parallel to at least one of a top surface of the substrate and a bottom surface of the substrate;
forming an electrically insulating layer over the substrate; and
performing a plasma doping (PLAD) operation on the substrate, the PLAD operation comprising depositing dopants to a second depth within the substrate to form a second doped region, wherein the second doped region is formed by the dopants passing through the electrically insulating layer and settling at the second depth within the substrate and wherein the second doped region has a higher dopant concentration than the first doped region, is at least partially circumscribed by the first doped region, and has a shallower lower periphery than the lower periphery of the first doped region.
2. The method of claim 1 , wherein forming an electrically insulating layer comprises forming the electrically insulating layer from tetraethyl orthosilicate.
3. The method of claim 1 , wherein forming an electrically insulating layer comprises forming the electrically insulating layer having a thickness of from about 50 Å to about 100 Å.
4. The method of claim 1 , wherein:
depositing dopants to a second depth comprises depositing the dopants to a second depth of less than about 1000 Å; and
depositing dopants to a first depth comprises depositing the dopants to a first depth of less than about 1750 Å and at least about 250 Å greater than the second depth.
5. The method of claim 1 , further comprising annealing the substrate to more uniformly distribute the dopants than prior to the annealing.
6. The method of claim 5 , wherein annealing the substrate comprises rapid thermal annealing the substrate.
7. The method of claim 1 , wherein:
performing a PLAD operation comprises conducting the PLAD operation at an energy in a range of from about 5 KeV to about 15 KeV such that the second doped region has a dopant concentration in a range of from about 1×10 19 dopant atoms/cm 3 to about 5×10 21 dopant atoms/cm 3 ; and
performing a first doping operation comprises performing the first doping operation at an energy in a range of from about 10 KeV to about 25 KeV such that the first doped region has a dopant concentration in a range of from about 1×10 16 dopant atoms/cm 3 to about 1×10 19 dopant atoms/cm 3 , the first doping operation being conducted in a medium power implanter operating in a range of from about 0 KeV to about 200 KeV.
8. The method of claim 1 , wherein the first doped region and the second doped region form a portion of an electrical device that is selected from the group consisting of a diode, a resistor, and a transistor.
9. A method of forming an electrical structure on a substrate, comprising:
providing a gate region over a substrate, the gate region having a bottom surface;
performing a first doping operation on the substrate, the first doping operation comprising depositing dopants to a first depth within the substrate to form a first doped region, wherein the first doped region has at least a portion thereof that underlaps the bottom surface of the gate region;
forming an electrically insulating layer over the substrate; and
performing a plasma doping (PLAD) operation on the substrate, the PLAD operation comprising depositing dopants to a second depth within the substrate to form a second doped region, wherein the second depth is less than the first depth and wherein the second doped region is formed by passing dopants through the electrically insulating layer to the second depth, has a higher dopant concentration than the first doped region, is at least partially circumscribed by the first doped region, and does not underlap the bottom surface of the gate region.
10. The method of claim 9 , wherein forming an electrically insulating layer comprises forming the electrically insulating layer from tetraethyl orthosilicate.
11. The method of claim 9 , wherein forming an electrically insulating layer comprises forming the electrically insulating layer having a thickness of from about 50 Å to about 100 Å.
12. The method of claim 9 , wherein:
depositing dopants to a second depth comprises depositing the dopants to a second depth of less than about 1000 Å; and
depositing dopants to a first depth comprises depositing the dopants to a first depth of less than about 1750 Å and at least about 250 Å greater than the second depth.
13. The method of claim 9 , further comprising annealing the substrate to more uniformly distribute the dopants.
14. The method of claim 13 , wherein annealing the substrate comprises rapid thermal annealing the substrate.
15. The method of claim 9 , wherein:
performing a PLAD operation comprises conducting the PLAD operation at an energy in a range of from about 5 KeV to about 15 KeV such that the second doped region has a dopant concentration in a range of from about 1×10 19 dopant atoms/cm 3 to about 5×10 21 dopant atoms/cm 3 ; and
performing a first doping operation comprises performing the first doping operation at an energy in a range of from about 10 KeV to about 25 KeV such that the first doped region has a concentration of dopants in a range of from about 1×10 16 dopant atoms/cm 3 to about 1×10 19 dopant atoms/cm 3 , the first doping operation being conducted in a medium power implanter operating in a range from about 0 KeV to about 200 KeV.
16. The method of claim 9 , wherein the first doped region and the second doped region form a portion of a transistor.