Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
View Patent ↗A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m 2 per unit area which is smaller than the magnetic moment m 1 , and has an amplitude h 2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h 3 , which is smaller than the amplitudes h 1 and h 2 , of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.
1. A magnetoresistive effect device comprising:
a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment m 1 per unit area;
a nonmagnetic layer contacting with the first ferromagnetic layer, having an amplitude h 1 of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer;
a second ferromagnetic layer contacting with the nonmagnetic layer on an opposite side to the first ferromagnetic layer, having a fixed magnetization direction, having magnetic moment m 2 per unit area which is smaller than the magnetic moment m 1 , and having an amplitude h 2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer;
a barrier layer contacting with the second ferromagnetic layer on an opposite side to the nonmagnetic layer, and having an amplitude h 3 of roughness of an interface between the barrier layer and the second ferromagnetic layer, the amplitude h 3 being smaller than the amplitudes h 1 and h 2 ; and
a third ferromagnetic layer contacting with the barrier layer on an opposite side to the second ferromagnetic layer and having a variable magnetization direction.
2. The device according to claim 1 , wherein (m 2 /m 1 ) is 0.5 or more.
3. The device according to claim 1 , further comprising an antiferromagnetic layer contacting with the first ferromagnetic layer on an opposite side to the nonmagnetic layer and being made of an alloy containing Mn, a crystal surface of the antiferromagnetic layer being preferentially orientated toward (111) surface.
4. The device according to claim 1 , further comprising an antiferromagnetic layer contacting with the first ferromagnetic layer on an opposite side to the nonmagnetic layer and having an amplitude h 4 of roughness of an interface between the antiferromagnetic layer and the first ferromagnetic layer, the amplitude h 4 being larger than the amplitude h 3 .
5. The device according to claim 1 , wherein the second ferromagnetic layer is substantially made of an amorphous material.
6. The device according to claim 1 , wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer has at least two magnetic layers which are laminated, and magnetization directions of the magnetic layers are orientated parallel to each other by ferromagnetic coupling.
7. A magnetic random access memory comprising:
a magnetoresistive effect device which comprises
a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment m 1 per unit area,
a nonmagnetic layer contacting with the first ferromagnetic layer and having an amplitude h 1 of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer,
a second ferromagnetic layer contacting with the nonmagnetic layer on an opposite side to the first ferromagnetic layer, having a fixed magnetization direction, having magnetic moment m 2 per unit area which is smaller than the magnetic moment m 1 , and having an amplitude h 2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer,
a barrier layer contacting with the second ferromagnetic layer on an opposite side to the nonmagnetic layer and having an amplitude h 3 of roughness of an interface between the barrier layer and the second ferromagnetic layer, the amplitude h 3 being smaller than the amplitudes h 1 and h 2 , and
a third ferromagnetic layer contacting with the barrier layer on an opposite side to the second ferromagnetic layer and having a variable magnetization direction;
a first wiring electrically connected to the first ferromagnetic layer or the third ferromagnetic layer; and
a second wiring sandwiching the magnetoresistive effect device with the first wiring.
8. The memory according to claim 7 , wherein (m 2 /m 1 ) is 0.5 or more.
9. The memory according to claim 7 , further comprising an antiferromagnetic layer contacting with the first ferromagnetic layer on an opposite side to the nonmagnetic layer and being made of an alloy containing Mn, a crystal surface of the antiferromagnetic layer being preferentially orientated toward (111) surface.
10. The memory according to claim 7 , further comprising an antiferromagnetic layer contacting with the first ferromagnetic layer on an opposite side to the nonmagnetic layer and having an amplitude h 4 of roughness of an interface between the antiferromagnetic layer and the first ferromagnetic layer, the amplitude h 4 being larger than the amplitude h 3 .
11. The memory according to claim 7 , wherein the second ferromagnetic layer is substantially made of an amorphous material.
12. The memory according to claim 7 , wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer has at least two magnetic layers which are laminated, and magnetization directions of the magnetic layers are orientated parallel to each other by ferromagnetic coupling.
13. The memory according to claim 7 , wherein the second wiring is electrically insulated from the magnetoresistive effect device.
14. The memory according to claim 7 , wherein the second wiring is electrically connected to the magnetoresistive effect device.
15. A magnetoresistive effect device manufacturing method comprising:
forming a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment m 1 per unit area;
forming a nonmagnetic layer on the first ferromagnetic layer;
forming a second ferromagnetic layer on the nonmagnetic layer, the second ferromagnetic layer having a fixed magnetization direction and having magnetic moment m 2 per unit area which is smaller than the magnetic moment m 1 ;
smoothing a surface of the second ferromagnetic layer on an opposite side to the nonmagnetic layer;
forming a barrier layer on the second ferromagnetic layer; and
forming a third ferromagnetic layer on the barrier layer, the third ferromagnetic layer having a variable magnetization direction.
16. The method according to claim 15 , further comprising forming an antiferromagnetic layer, and wherein forming the first ferromagnetic layer includes forming the first ferromagnetic layer on the antiferromagnetic layer.
17. The method according to claim 15 , wherein forming the second ferromagnetic layer includes forming the second ferromagnetic layer which has magnetic moment m 2 per unit which makes (m 2 /m 1 ) 0.5 or more.