Patent Assignment
Reel/Frame 051260/0291
De-Merger
Recorded: 2019-12-12
Pages: 10
Assignor
KABUSHIKI KAISHA TOSHIBA
Executed: 2017-04-01
Assignee
TOSHIBA MEMORY CORPORATION
1-1, SHIBAURA 1-CHOME, MINATO-KU,, TOKYO,, JAPAN
Covered Properties
(208)
Magnetoresistive Random Access Memory Device
Pattern Inspecting Method and Pattern Inspecting Apparatus
Semiconductor Integrated Circuit Device
Magnetic Memory Device and Method of Reading Information
Magnetic Random Access Memory
Magnetic Random Access Memory and Method of Manufacturing the Same
Magnetoresistive Element
Magnetoresistive Effect Device, Magnetic Random Access Memory, and Magnetoresistive Effect Device Manufacturing Method
Magnetoresistive Effect Element and Magnetic Memory
Semiconductor Memory Device
Magnetic Memory Device
Defect Inspection Apparatus
Magnetoresistive Random Access Memory and Its Write Control Method
Magnetoresistive Element
Magnetic Memory Device
Magnetic Memory Device and Write/Read Method of the Same
Semiconductor Memory
Spin Injection Write Type Magnetic Memory Device
Magnetic Memory
Sense Amplifier
Semiconductor Memory Having Resistance Change Element
Magnetic Random Access Memory and Method of Manufacturing the Same
Magnetic Memory Element, Magnetic Memory Having Said Magnetic Memory Element, and Method for Driving Magnetic Memory
Magnetoresistive Element and Magnetic Memory
Magnetic Random Access Memory
Magnetic Random Access Memory and Method of Manufacturing the Same
Magnetoresistive Effect Element with Intermediate Oxide Layer Containing Boron and an Element Selected from Ca, Mg, Sr, Ba, Ti, and Sc
Magnetoresistive Effect Device and Magnetic Random Access Memory Using the Same
Semiconductor Memory Device
Magnetic Memory Device
Magnetic Random Access Memory and Write Method of the Same
Magnetoresistive Element and Magnetic Memory
Magnetic Random Access Memory and Write Method of the Same
Magnetoresistive Effect Element and Magnetic Memory
Magnetoresistive Element
Magnetic Random Access Memory
Semiconductor Memory Device
Semiconductor Memory Device and Data Write and Read Methods of the Same
Magnetic Memory Device
Magnetic Random Access Memory and Manufacturing Method Thereof
Pattern Inspection Apparatus
Magnetic Random Access Memory, and Write Method and Manufacturing Method of the Same
Magnetoresistance Effect Element and Magnetoresistive Random Access Memory Using the Same
Semiconductor Memory Device and Method of Manufacturing the Same
Magnetoresistive Element and Manufacturing Method Thereof
Magnetic Random Access Memory and Method of Manufacturing the Same
Magnetoresistive Random Access Memory
Resistance Change Memory with Current Control and Voltage Control During a Write Operation, and Write Method of the Same
Magnetoresistive Element and Method of Manufacturing the Same
Magnetoresistive Element and Magnetoresistive Random Access Memory Including the Same
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element
Resistance Change Memory
Magnetoresistive Effect Element and Magnetic Random Access Memory
Semiconductor Memory Device
Magnetic Random Access Memory and Write Method of the Same
Resistance Change Type Memory
Magnetoresistive Random Access Memory
Magnetoresistive Element
Resistance-Change Memory
Magnetoresistive Effect Element
Integrated Semiconductor Device
Magnetoresistance Effect Element and Magnetic Random Access Memory
Semiconductor Memory Device
Resistance Change Memory, and Data Write and Erase Methods Thereof
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element
Semiconductor Memory
Semiconductor Memory Device Having a Resistive Memory Element
Magnetic Random Access Memory and Write Method of the Same
Magnetoresistive Element and Method of Manufacturing the Same
Magnetoresistive Effect Device and Magnetic Memory
Semiconductor Memory Device
Data Writing Method for Magnetoresistive Effect Element and Magnetic Memory
Magnetic Random Access Memory and Method of Manufacturing the Same
Sense Amplifier
Magnetic Random Access Memory
Magnetoresistive Element
Method of Manufacturing a Magnetic Random Access Memory, Method of Manufacturing an Embedded Memory, and Template
Magnetoresistive Element Including Upper Electrode Having Hexagonal Cross-Section Shape and Method of Manufacturing the Same
Magnetoresistive Device and Magnetic Random Access Memory
Magnetoresistive Element and Magnetic Memory
Magnetic Memory
Magnetoresistive Effect Memory
Magnetoresistive Element and Magnetoresistive Random Access Memory Including the Same
Semiconductor Memory Device
Magnetic Memory Element, Magnetic Memory Having Said Magnetic Memory Element, and Method for Driving Magnetic Memory
Magnetoresistive Element and Magnetic Memory
Magnetic Memory
Magnetoresistive Element
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element, Method of Manufacturing the Same, and Magnetic Memory
Magnetoresistive Element and Magnetoresistive Random Access Memory Including the Same
Magnetoresistive Element and Magnetoresistive Random Access Memory Including the Same
Magnetic Random Access Memory and Manufacturing Method of the Same
Magnetoresistance Effect Element and Magnetic Random Access Memory
Magnetic Memory and Method of Manufacturing the Same
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Effect Element and Magnetic Memory
Magnetoresistive Element
Magnetoresistive Effect Element, Magnetic Memory
Magnetoresistive Element Including a Nitrogen-Containing Buffer Layer
Magnetoresistive Element and Magnetic Random Access Memory
Magnetic Random Access Memory
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element and Magnetic Memory Using the Same
Magnetoresistive Element and Magnetic Memory Using the Same
Magnetoresistive Element and Magnetic Memory
Magnetic Memory
Magnetoresistive Element and Magnetic Memory Using the Same
Magnetoresistive Element and Method of Manufacturing the Same
Magnetic Random Access Memory
Magnetic Memory Including a Magnetoresistive Element
Magnetoresistance Effect Element and Magnetic Memory
Magnetic Memory Element Having an Adjustment Layer for Reducing a Leakage Magnetic Field from a Reference Layer and Magnetic Memory Thereof
Magnetoresistive Element and Producing Method Thereof
Magnetoresistive Element and Method of Manufacturing the Same
Magnetic Memory
Magnetoresistive Element and Magnetoresistive Memory
Magnetic Memory and Method of Fabricating the Same
Magnetoresistive Element and Magnetic Memory
Magnetic Memory
Magnetic Memory Element and Method of Manufacturing the Same
Cache System and Information-Processing Device
Magnetic Random Access Memory and Memory System
Cache Device, Cache System and Control Method
Magnetic Random Access Memory
Magnetic Memory
Nonvolatile Memory Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device Using Carbon Nanotube, and Manufacturing Method Thereof
Interconnection of Semiconductor Device with Graphene Wire
MAGNETORESISTIVE MEMORY DEVICE WITH REDUCED LEAKAGE AND HIGH SPEED OPERATION IN AN SoC
Semiconductor Device and Method of Manufacturing the Same
Magnetoresistance Element and Magnetic Memory
Semiconductor Device Having Stacked Chips
Magnetoresistive Element, Magnetic Memory, and Method of Manufacturing Magnetoresistive Element
Semiconductor Storage Device with Magnetoresistive Element
Magnetoresistive Element and Magnetic Memory Using the Same
Magnetoresistive Element Using Specific Underlayer Material
Magnetic Memory Element and Nonvolatile Memory Device
Microprobe and Microprobe Manufacturing Method
Magnetoresistive Element and Magnetic Memory
Magnetic Memory
Magnetic Memory
Graphene Wiring
Processor System Having Variable Capacity Memory
Processor
Non-Volatile Memory, Writing Method for the Same, and Reading Method for the Same
Magnetic Memory and Method of Manufacturing the Same
Semiconductor Device Having a Graphene Interconnect
Magnetic Random Access Memory
Magnetoresistive Element and Magnetic Memory Using the Same
Semiconductor Storage Device with Magnetoresistive Element
Semiconductor Device Including Catalyst Layer and Graphene Layer Thereon and Method for Manufacturing the Same
Semiconductor Device Capable of Reducing Power Consumption
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device Comprising a Graphene Wire
Wiring and Method for Manufacturing the Same
Semiconductor Device and Method of Manufacturing the Same
Magnetoresistive Element
Magnetoresistive Element
Magnetic Random Access Memory
Magnetic Memory
Memory Control Circuit and Processor
Information Processing Method, Information Processing Apparatus and Non-Transitory Computer Readable Medium
Semiconductor Storage Device and Processor System
Resistance Change Memory
Graphene Wiring Structure and Manufacturing Method Thereof
Memory Control Circuit, Cache Memory and Memory Control Method
Memory Control Circuit and Cache Memory
Magnetoresistive Element and Magnetic Memory
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method Thereof
Memory System
Memory System
Storage Device Including Magnetic Elements
Semiconductor Device and Manufacturing Method Thereof
Cache Memory System and Processor System
Semiconductor Memory
Nonvolatile Resistance Changing Semiconductor Memory Using First and Second Writing Operations
Cache Memory System and Processor System
Memory Device
Memory Device
Graphene Wiring Structure and Method for Manufacturing Graphene Wiring Structure
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element and Magnetic Memory
Cache Memory, Error Correction Circuitry, and Processor System
Magnetic Element and Memory Device
Cache Memory System and Processor System
Cache Memory System and Processor System
Magnetic Memory Element and Memory Device
Magnetic Memory Device and Nonvolatile Memory Apparatus
Nonvolatile Ram Comprising a Write Circuit and a Read Circuit Operating in Parallel
Nonvolatile Semiconductor Memory
Memory System and Cache Memory
Nonvolatile Memory with Magnetoresistive Element and Transistor
Graphene Wiring Structure and Method for Manufacturing Graphene Wiring Structure
Superlattice Memory and Crosspoint Memory Device
Superlattice Memory and Crosspoint Memory Device
Magnetoresistive Element and Magnetic Memory
Magnetoresistive Element and Magnetic Memory
SUPERLATTICE MEMORY HAVING GeTe LAYER AND NITROGEN-DOPED Sb2Te3 LAYER AND MEMORY DEVICE HAVING THE SAME
Method for Manufacturing a Semiconductor Device
Semiconductor Device Capable of Reducing Power Consumption
Related Assignments
(19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 2, 2004
From: INABA, TSUNEO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015172/0024 →
Assignment of Assignor's Interest
May 26, 2004
From: TSUCHIYA, HIDEO; KATO, YOSHIHIDE; MATSUKI, KAZUTO; SANADA, YASUSHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015376/0963 →
Assignment of Assignor's Interest
Jul 1, 2004
From: TSUCHIDA, KENJI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015527/0076 →
Assignment of Assignor's Interest
Sep 27, 2004
From: TAKIZAWA, RYOUSUKE; TSUCHIDA, KENJI; IWATA, YOSHIHISA; INABA, TSUNEO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015836/0526 →
Assignment of Assignor's Interest
Oct 29, 2004
From: IWATA, YOSHIHISA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 015938/0407 →
Assignment of Assignor's Interest
Mar 25, 2005
From: ASAO, YOSHIAKI; YODA, HIROAKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 016396/0898 →
Assignment of Assignor's Interest
Dec 28, 2005
From: NAKAYAMA, MASAHIKO; KAI, TADASHI; KISHI, TATSUYA; FUKUZUMI, YOSHIAKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 017406/0611 →
Assignment of Assignor's Interest
Feb 6, 2006
From: NAGASE, TOSHIHIKO; IKEGAWA, SUMIO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 017538/0052 →
Assignment of Assignor's Interest
Mar 21, 2006
From: INABA, TSUNEO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 017711/0749 →
Assignment of Assignor's Interest
May 26, 2006
From: NAKAYAMA, MASAHIKO; KAI, TADASHI; IKEGAWA, SUMIO; FUKUZUMI, YOSHIAKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 017936/0931 →
Assignment of Assignor's Interest
Jun 7, 2006
From: KAI, TADASHI; NAKAYAMA, MASAHIKO; IKEGAWA, SUMIO; FUKUZUMI, YOSHIAKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 017978/0744 →
Assignment of Assignor's Interest
Nov 2, 2006
From: NAGASE, TOSHIHIKO; YOSHIKAWA, MASATOSHI; KITAGAWA, EIJI; NAKAYAMA, MASAHIKO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018488/0485 →
Assignment of Assignor's Interest
Nov 28, 2006
From: OGAWA, RIKI; MITSUI, SOICHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018638/0007 →
Assignment of Assignor's Interest
Dec 6, 2006
From: SHIMOMURA, NAOHARU; KISHI, TATSUYA; TAKIZAWA, RYOUSUKE
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018666/0064 →
Assignment of Assignor's Interest
Dec 12, 2006
From: FUKUZUMI, YOSHIAKI; NAGASE, TOSHIHIKO; ASAO, YOSHIAKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018619/0853 →
Assignment of Assignor's Interest
Feb 7, 2007
From: IWATA, YOSHIHISA; FUJITA, KATSUYUKI; SHIMIZU, YUUI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 018864/0245 →
Assignment of Assignor's Interest
May 17, 2016
From: NOGUCHI, HIROKI; FUJITA, SHINOBU
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 038614/0155 →
Merger
Dec 12, 2019
From: TOSHIBA MEMORY CORPORATION; K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051262/0776 →
Change of Name and Address
Dec 12, 2019
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 051262/0881 →