Magnetic random access memory and memory system

1. A magnetic random access memory comprising:

magnetoresistive elements capable of storing one of a first resistance value and a second resistance value that is different from the first resistance value;

a write circuit to write s-bit (s is a natural number equal to 2 or greater) write data to the magnetoresistive elements, the write data supplied from a buffer memory;

a read circuit to read s-bit read data from the magnetoresistive elements; and

a control circuit that is configured to:

select one of first and second modes based on a mode selection signal;

control the read circuit so that the read circuit reads the read data and control the write circuit so that the write circuit writes one of the write data and inversion data of the write data to the magnetoresistive elements based on the read data and the write data, if free space of the buffer memory is equal to a fixed value or more when the second mode is selected; and

control the write circuit so that the write circuit writes one of the write data and the inversion data of the write data to the magnetoresistive elements, the one of the write data and the inversion data corresponding to a relation that a number of bits setting the magnetoresistive elements to the first resistance value is larger than a number of bits setting the magnetoresistive elements to the second resistance value, if the free space of the buffer memory is less than the fixed value when the second mode is selected.

2. The memory of claim 1 ,

wherein the control circuit is configured to:

set the number of mutually matching bits among s bits of the read data and s bits of the write data as n 1 and the number of mutually matching bits among s bits of the read data and s bits of the inversion data of the write data as n 2 when the second mode is selected and the free space of the buffer memory is equal to the fixed value or more;

execute mask processing to inhibit writing of the mutually matching bits before executing a write operation of mutually mismatching bits among the s bits of the write data if n 1 >n 2 ; and

execute the mask processing to inhibit writing of the mutually matching bits before executing a write operation of mutually mismatching bits among the s bits of the inversion data of the write data if n 1 <n 2 .

3. The memory of claim 1 ,

wherein the control circuit is configured to:

set the number of bits setting the magnetoresistive elements to the first resistance value among s bits of the write data as m 1 and the number of bits setting the magnetoresistive elements to the second resistance value as m 2 when the second mode is selected and the free space of the buffer memory is less than the fixed value;

control the write circuit so that the write circuit writes the s bits of the write data to the magnetoresistive elements if m>m 2 ; and

control the write circuit so that the write circuit writes s bits of the inversion data of the write data to the magnetoresistive elements if m 1 <m 2 .

4. The memory of claim 1 ,

wherein the control circuit is configured to:

set the number of bits setting the magnetoresistive elements to the first resistance value among s bits of the write data as m 1 and the number of bits setting the magnetoresistive elements to the second resistance value as m 2 when the first mode is selected;

control the write circuit so that the write circuit writes the s bits of the write data to the magnetoresistive elements if m 1 >m 2 ; and

control the write circuit so that the write circuit writes s bits of the inversion data of the write data to the magnetoresistive elements if m 1 <m 2 .

5. The memory of claim 1 ,

wherein the control circuit is configured to:

set a flag bit to a first value when s bits of the write data are written to the magnetoresistive elements;

set the flag bit to a second value when s bits of the inversion data of the write data are written to the magnetoresistive elements;

read s bits of the read data from the magnetoresistive elements when the flag bit is the first value; and

read s bits of the inversion data of the read data from the magnetoresistive elements when the flag bit is the second value.

6. The memory of claim 1 ,

wherein the first mode is selected for uses focused on lower power consumption during reading; and

the second mode is selected for uses focused on lower power consumption during writing.

7. The memory of claim 1 ,

wherein the first resistance value is larger than the second resistance value.

8. The memory of claim 1 ,

wherein the first resistance value is smaller than the second resistance value.

9. The memory of claim 1 ,

wherein the write data is sequentially supplied from a data series stored in the buffer memory to the write circuit in s bits.

10. The memory of claim 1 ,

wherein the inversion data of the write data is generated by a data inversion circuit.

11. The memory of claim 1 , further comprising:

a selection transistor connected in series to one of the magnetoresistive elements.

12. A memory system comprising:

the memory of claim 1 ; and

a controller controlling an operation of the memory,

wherein the controller supplies the mode selection signal to the memory.

13. A memory system comprising:

the memory of claim 1 ;

the buffer memory temporarily storing the write data; and

a controller controlling operations of the memory of claim 1 and the buffer memory,

wherein the controller determines whether the free space of the buffer memory is equal to a fixed value or more, or less than the fixed value based on a free space signal indicating the free space of the buffer memory.

14. A method of writing write data from a buffer memory to a magnetic random access memory, the magnetic random access memory comprising:

magnetoresistive elements capable of storing one of a first resistance value and a second resistance value that is different from the first resistance value;

a write circuit to write s-bit (s is a natural number equal to 2 or greater) write data to the magnetoresistive elements; and

a read circuit to read s-bit read data from the magnetoresistive elements,

the method comprising:

selecting one of first and second modes based on a mode selection signal;

reading the read data by the read circuit and writing one of the write data and inversion data of the write data to the magnetoresistive elements by the write circuit based on the read data and the write data if free space of the buffer memory is equal to a fixed value or more when the second mode is selected; and

writing one of the write data and the inversion data of the write data to the magnetoresistive elements by the write circuit so that a number of bits setting the magnetoresistive elements to the first resistance value is larger than a number of bits setting the magnetoresistive elements to the second resistance value if the free space of the buffer memory is less than the fixed value when the second mode is selected.

15. The method of claim 14 , further comprising:

setting the number of mutually matching bits among bits of the read data and s bits of the write data as n 1 and the number of mutually matching bits among s bits of the read data and s bits of the inversion data of the write data as n 2 when the second mode is selected and the free space of the buffer memory is equal to the fixed value or more;

executing mask processing to inhibit writing of the mutually matching bits before executing a write operation of mutually mismatching bits among the s bits of the write data if n 1 >n 2 ; and

executing the mask processing to inhibit writing of the mutually matching bits before executing a write operation of mutually mismatching bits among the s bits of the inversion data of the write data if n 1 <n 2 .

16. The method of claim 14 , further comprising:

setting the number of bits setting the magnetoresistive elements to the first resistance value among s bits of the write data as m 1 and the number of bits setting the magnetoresistive elements to the second resistance value as m 2 when the second mode is selected and the free space of the buffer memory is less than the fixed value;

writing the s bits of the write data to the magnetoresistive elements by the write circuit if m 1 >m 2 ; and

writing s bits of the inversion data of the write data to the magnetoresistive elements by the write circuit if m 1 <m 2 .

17. The method of claim 14 , further comprising:

setting the number of bits setting the magnetoresistive elements to the first resistance value among s bits of the write data as m 1 and the number of bits setting the magnetoresistive elements to the second resistance value as m 2 when the first mode is selected;

writing the s bits of the write data to the magnetoresistive elements by the write circuit if m 1 >m 2 ; and

writing s bits of the inversion data of the write data to the magnetoresistive elements by the write circuit if m 1 <m 2 .

18. The method of claim 14 , further comprising:

setting a flag bit to a first value when s bits of the write data are written to the magnetoresistive elements;

setting the flag bit to a second value when s bits of the inversion data of the write data are written to the magnetoresistive elements;

reading s bits of the read data from the magnetoresistive elements when the flag bit is the first value; and

reading s bits of the inversion data of the read data from the magnetoresistive elements when the flag bit is the second value.

19. The method of claim 14 ,

wherein the first mode is selected for uses focused on lower power consumption during reading; and

the second mode is selected for uses focused on lower power consumption during writing.

20. The method of claim 14 , further comprising:

supplying the mode selection signal from a controller to the magnetic random access memory.

21. The method of claim 14 , further comprising:

determining whether the free space of the buffer memory is equal to a fixed value or more, or less than the fixed value based on a free space signal indicating the free space of the buffer memory.