Magnetic memory and method of fabricating the same
View Patent ↗A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer.
1. A method of fabricating a magnetic memory comprising:
forming a separation layer on a first substrate;
sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure;
forming a first conductive bonding layer on the second ferromagnetic layer;
forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive layer being electrically connected to the transistor;
arranging the first substrate and the second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and
separating the first substrate from the first ferromagnetic layer by using the separation layer.
2. The method according to claim 1 , wherein the separation layer contains a deliquescent material, and the separating of the first substrate is performed by dissolving the separation layer into water.
3. The method according to claim 1 , wherein the separation layer contains at least one of a fluoride containing at least one element selected from the group consisting of Li, Na, K, Rb, and Cs, a chloride containing at least one element selected from the group consisting of Na, Mg, Ca, Sr, and Ba, and an oxide containing at least one element selected from the group consisting of Li, Na, K, Rb, and Cs.
4. The method according to claim 1 , wherein the separation layer contains a material having an embrittlement function and containing hydrogen or helium, and the forming of the separation layer is performed under an atmosphere containing hydrogen or helium.
5. The method according to claim 4 , wherein the separating of the first substrate is performed by applying an impactive force to the separation layer.
6. The method according to claim 1 , wherein the separation layer contains a hydrogen absorbing alloy or material with a perovskite structure.
7. The method according to claim 1 , further comprising forming a base layer on the first substrate before the forming of the separation layer, the separation layer being formed on the base layer.
8. The method according to claim 7 , wherein the base layer comprises one layer selected from the group consisting of:
a layer of nitride having a {001}-oriented NaCl structure, and containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;
a {001}-oriented perovskite oxide layer of ABO 3 , in which the A-site contains at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, and the B-site contains at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb;
a layer of oxide having a {001}-oriented NaCl structure, and containing at least one element selected from the group consisting of Mg, Al, and Ce; and
a layer having a {001}-oriented tetragonal structure or cubic structure, and containing at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
9. The method according to claim 1 , further comprising forming a lattice relaxation layer on the separation layer before the forming of the first ferromagnetic layer.
10. The method according to claim 9 , wherein the lattice relaxation layer includes one layer selected from the group consisting of:
a layer of nitride having a {001}-oriented NaCl structure, and containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;
a {001}-oriented perovskite oxide layer of ABO 3 , in which the A-site contains at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, and the B-site contains at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb;
a layer of oxide having a {001}-oriented NaCl structure, and containing at least one element selected from the group consisting of Mg, Al, and Ce; and
a layer having a {001}-oriented tetragonal structure or cubic structure, and containing at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
11. The method according to claim 1 , further comprising forming a second nonmagnetic layer on the second ferromagnetic layer and forming a third ferromagnetic layer on the second nonmagnetic layer before the forming of the first conductive bonding layer, wherein when the first and the second conductive bonding layers are bonded to each other, the direction of magnetization of the third ferromagnetic layer is opposite to that of the second ferromagnetic layer.
12. The method according to claim 1 , further comprising forming a third ferromagnetic layer on the separation layer and forming a second ferromagnetic layer on the third ferromagnetic layer before forming the first ferromagnetic layer, wherein when the first and the second conductive bonding layers are bonded to each other, the direction of magnetization of the third ferromagnetic layer is opposite to that of the first ferromagnetic layer.
13. The method according to claim 1 , further comprising forming a fourth ferromagnetic layer on the second substrate before the forming of the second conductive bonding layer on the second substrate, the second conductive bonding layer being formed on the fourth ferromagnetic layer, wherein when the first and the second conductive bonding layers are bonded to each other, the direction of magnetization of the fourth ferromagnetic layer is opposite to that of the second ferromagnetic layer.
14. The method according to claim 1 , wherein the first and the second conductive bonding layers contain a metal, nitride, boride, oxide, or carbide containing at least one element selected from the group consisting of Au, Cu, Pt, Ag, Al, Ta, Ti, W, Cr, Mo, V, Nb, Zr, Hf, Mg, Ru, and the first and the second conductive bonding layers are formed of the same material or different materials.
15. The method according to claim 1 , wherein the first substrate is a single crystal substrate of a material selected from the group consisting of Si, MgO, Al 2 O 3 , SrTiO 3 , MgAl 2 O 4 , and TiO 2 .
16. The method according to claim 1 , wherein the first and the second ferromagnetic layers include any of:
a magnetic layer containing at least one element selected from the group consisting of Mn, Ga, and Al;
a magnetic layer containing at least one element selected from the group consisting of Fe, Co, and Ni;
a magnetic layer containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au, and Cu; and
a magnetic layer containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Tb, Dy, Sm, Er, and Tm.