Magnetoresistive element and magnetic memory
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR 1-x hR x ) z (TM 1-y Z y ) 1-z (0<x<1, 0≤y≤0.6, 0.13≤z≤0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.
1. A magnetoresistive element comprising:
a first magnetic layer;
a second magnetic layer; and
a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer,
the second magnetic layer containing a material with a composition (IR 1-x hR x ) z (TM 1-y Z y ) 1-z (0<x<1, 0≤y≤0.6, 0.13≤z≤0.22) where IR is at least one element of Y, La, Ce, Pr, Nd, or Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.
2. The magnetoresistive element according to claim 1 , wherein the material includes crystal with a hexagonal structure.
3. The magnetoresistive element according to claim 1 , wherein the material has a composition (IR 1-x hR x ) z (TM 1-y Z y ) 1-z (0.1≤x≤0.7, 0.18≤y≤0.54, 0.13≤z≤0.22).
4. The magnetoresistive element according to claim 1 , wherein the material contains at least Sm as IR, at least Gd as hR, at least Co as TM, and at least Cu as Z.
5. The magnetoresistive element according to claim 1 , further comprising a third magnetic layer and a first layer, a magnetization of the third magnetic layer being antiparallel to a magnetization of the second magnetic layer, the second magnetic layer being disposed between the first nonmagnetic layer and the third magnetic layer, and the first layer being disposed between the second magnetic layer and the third magnetic layer.
6. The magnetoresistive element according to claim 1 , further comprising a fourth magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, and having a magnetization that is substantially in a same direction as the magnetization of the second magnetic layer.
7. The magnetoresistive element according to claim 6 , further comprising a second layer disposed between the second magnetic layer and the fourth magnetic layer.
8. The magnetoresistive element according to claim 7 , wherein the second layer contains at least one element of Mo, Ta, or W, at least one element of Al, Ni, Cu, Rh, Ir, or Pt, or at least one element of Mg, Sc, Co, Zr, Ru, Hf, or Zn.
9. The magnetoresistive element according to claim 1 , further comprising a fifth magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, and a third layer disposed between the fifth magnetic layer and the second magnetic layer, a magnetization direction of the fifth magnetic layer being substantially opposite to a magnetization direction of the second magnetic layer.
10. The magnetoresistive element according to claim 1 , further comprising a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, a fourth layer disposed between the second magnetic layer and the third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer disposed between the second magnetic layer and the fourth magnetic layer, the second magnetic layer being disposed between the fourth layer and the fourth magnetic layer, a magnetization direction of the third magnetic layer being substantially opposite to a magnetization direction of the second magnetic layer, and a magnetization direction of the fourth magnetic layer being substantially the same as the magnetization direction of the second magnetic layer.
11. A magnetic memory comprising:
the magnetoresistive element according to claim 1 ;
a selection transistor including first and second terminals and gate, the first terminal electrically connected to one of the first magnetic layer and the second magnetic layer;
a first wiring electrically connected to the other of the first magnetic layer and the second magnetic layer;
a second wiring electrically connected to the second terminal of the selection transistor; and
a third wiring electrically connected to the gate of the selection transistor.
12. The magnetic memory according to claim 11 , wherein the material includes crystal with a hexagonal structure.
13. The magnetic memory according to claim 11 , wherein the material has a composition (IR 1-x hR x ) z (TM 1-y Z y ) 1-z (0.1≤x≤0.7, 0.18≤y≤0.54, 0.13≤z≤0.22).
14. The magnetic memory according to claim 11 , wherein the material contains at least Sm as IR, at least Gd as hR, at least Co as TM, and at least Cu as Z.
15. The magnetic memory according to claim 11 , further comprising a third magnetic layer and a first layer, a magnetization of the third magnetic layer being antiparallel to a magnetization of the second magnetic layer, the second magnetic layer being disposed between the first nonmagnetic layer and the third magnetic layer, and the first layer being disposed between the second magnetic layer and the third magnetic layer.
16. The magnetic memory according to claim 11 , further comprising a fourth magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, and having a magnetization that is substantially in a same direction as the magnetization of the second magnetic layer.
17. The magnetic memory according to claim 16 , further comprising a second layer disposed between the second magnetic layer and the fourth magnetic layer.
18. The magnetic memory according to claim 17 , wherein the second layer contains at least one element of Mo, Ta, or W, at least one element of Al, Ni, Cu, Rh, Ir, or Pt, or at least one element of Mg, Sc, Co, Zr, Ru, Hf, or Zn.
19. The magnetic memory according to claim 11 , further comprising a fifth magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, and a third layer disposed between the fifth magnetic layer and the second magnetic layer, a magnetization direction of the fifth magnetic layer being substantially opposite to a magnetization direction of the second magnetic layer.
20. The magnetic memory according to claim 11 , further comprising a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, a fourth layer disposed between the second magnetic layer and the third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer disposed between the second magnetic layer and the fourth magnetic layer, the second magnetic layer being disposed between the fourth layer and the fourth magnetic layer, a magnetization direction of the third magnetic layer being substantially opposite to a magnetization direction of the second magnetic layer, and a magnetization direction of the fourth magnetic layer being substantially the same as the magnetization direction of the second magnetic layer.