Magnetic memory element and method of manufacturing the same
View Patent ↗According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.
1. A magnetic memory element comprising:
a first magnetic layer having a first surface and a second surface being opposite to the first surface;
a second magnetic layer;
an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer;
a layer which is provided on the second surface of the first magnetic layer, the layer containing B and Hf; and
an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing Hf.
2. The element according to claim 1 , wherein the insulating layer contains B.
3. The element according to claim 1 , wherein the insulating layer is made of an oxide or a nitride.
4. A magnetic memory element comprising:
a first magnetic layer having a first surface and a second surface being opposite to the first surface;
a second magnetic layer;
an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer;
a first layer which is provided on the second surface of the first magnetic layer, the first layer containing N and having a third surface and a fourth surface being opposite to the third surface, the third surface facing the second surface;
a second layer which is provided on the fourth surface of the first layer, the second layer containing B and at least one element selected from Hf, Al, and Mg; and
an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg.
5. The element according to claim 4 , further comprising:
a third layer which is provided between the first layer and the second layer, the third layer containing at least one element selected from Hf, Al, and Mg.
6. The element according to claim 5 , wherein the third layer contains B, and a B amount of the second layer is greater than a B amount of the third layer.
7. The element according to claim 4 , wherein the insulating layer contains B.
8. The element according to claim 4 , wherein the insulating layer is made of an oxide or a nitride.
9. The element according to claim 1 , wherein the layer is conductive.
10. The element according to claim 4 , wherein the first and second layers are conductive.
11. The element according to claim 5 , wherein the first to third layers are conductive.