Semiconductor device and method of manufacturing the same

1. A method of manufacturing a semiconductor device, comprising:

forming a substrate on which a semiconductor circuit is formed and a contact hole, which penetrates an interlayer insulating film provided with the interlayer insulating film on the substrate;

forming a conductive film on the contact hole;

forming a catalyst metal film on the conductive film by a chemical vapor deposition method;

depositing catalyst metal on a part of the catalyst metal film formed on a side wall of the conductive film by a physical vapor deposition method; and

growing graphene and carbon nanotubes on the catalyst metal and a part of the catalyst metal film formed on a bottom of the conductive film, respectively.

2. A method of manufacturing a semiconductor device, comprising:

forming a substrate on which a semiconductor circuit is formed and a contact hole, which penetrates an interlayer insulating film provided with the interlayer insulating film on the substrate;

forming a conductive film on the contact hole;

forming a catalyst metal film on the conductive film by a chemical vapor deposition method;

thinning the catalyst metal film on a bottom of the conductive film; and

growing graphene and carbon nanotubes on a part of the catalyst metal film formed on a side wall of the conductive film and the thinned catalyst metal film on the bottom of the conductive film, respectively.

3. The method according to claim 1 , wherein the part of the catalyst metal film formed on the bottom of the conductive film is thinner than the part of the catalyst metal film on the side wall of the conductive film.

4. The method according to claim 2 , wherein the part of the catalyst metal film formed on the bottom of the conductive film is thinner than the part of the catalyst metal film formed on the side wall of the conductive film.

5. The method according to claim 1 , wherein an average thickness of the part of the catalyst metal film formed on the bottom of the conductive film is not less than 1 nm and not more than 4 nm.

6. The method according to claim 2 , wherein an average thickness of the part of the catalyst metal film formed on the bottom of the conductive film is not less than 1 nm and not more than 4 nm.

7. The method according to claim 1 , wherein an average thickness of the part of the catalyst metal film formed on the side wall of the conductive film is not less than 5 nm and not more than 10 nm.

8. The method according to claim 2 , wherein an average thickness of the part of the catalyst metal film formed on the side wall of the conductive film is not less than 5 nm and not more than 10 nm.

9. The method according to claim 1 , wherein an aspect ratio (depth/diameter) of the contact hole is not smaller than 2.

10. The method according to claim 2 , wherein an aspect ratio (depth/diameter) of the contact hole is not smaller than 2.

11. The method according to claim 1 , wherein the physical vapor deposition method is a sputtering method.

12. The method according to claim 1 , wherein the part of the catalyst metal film formed on the bottom of the conductive film is atomized and the carbon nanotubes are grown from the atomized catalyst.

13. The method according to claim 2 , wherein the part of the catalyst metal film formed on the bottom of the conductive film is atomized and the carbon nanotubes are grown from the atomized catalyst.

14. The method according to claim 1 , wherein the part of the catalyst metal film formed on the side wall of the conductive film is not atomized and the graphene is grown from the catalyst, which is not atomized.

15. The method according to claim 2 , wherein the part of the catalyst metal film formed on the side wall of the conductive film is not atomized and the graphene is grown from the catalyst, which is not atomized.