Graphene wiring structure and method for manufacturing graphene wiring structure
A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.
1. A graphene wiring structure comprising:
a substrate;
a metal part on the substrate;
multilayered graphene being in direct contact with the metal part;
a first insulative film on the substrate; and
a second insulative film on the substrate, wherein
the metal part is present between the first insulative film and the second insulative film,
a side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate,
a first outer face of the multilayered graphene is at least partly in direct contact with a first side face of the first insulative film vertical to the substrate,
a second outer face of the multilayered graphene is at least partly in direct contact with a second side face of the second insulative film vertical to the substrate,
the multilayered graphene sandwiches the metal part,
the first insulative film and the second insulative film sandwiches the multilayered graphene and the metal part,
one edge of the multilayered graphene is in direct contact with the metal part, and
the other edge of the multilayered graphene being opposite to the one edge is unconnected to the metal part.
2. The structure according to claim 1 ,
wherein the metal part is of a ridge type shape.
3. The structure according to claim 1 ,
wherein when a wiring width as a distance from the first outer face of the multilayered graphene to the second outer face is assumed as W, and
a wiring length as a length of the multilayered graphene vertical in the wiring width direction and parallel to the surface of the substrate is assumed as L,
the W and L meet L/W ≧3.
4. The structure according to claim 1 ,
wherein the wiring length direction is a longitudinal direction.
5. The structure according to claim 1 ,
wherein the multilayered graphene is multilayered graphene in which a first interlayer substance is present between its layers.
6. The structure according to claim 5 ,
wherein the first interlayer substance is further present between the first outer face of the multilayered graphene being unconnected to the first side face of the first insulative film and the first side face of the first insulative film, and
the first interlayer substance is further present between the second outer face of the multilayered graphene being unconnected to the second side face of the second insulative film and the second side face of the second insulative film.
7. The structure according to claim 1 ,
wherein a gap layer is provided between the first insulative film and the second insulative film.
8. The structure according to claim 1 ,
wherein a second interlayer substance is present between layers in the multilayered graphene at the end of the multilayered graphene opposite to the substrate, and
the second interlayer substance contains one or more from among oxides, nitrides, and carbides.
9. The structure according to claim 1 ,
wherein a wiring width of the multilayered graphene is between 1 nm and 20 nm.
10. The structure according to claim 5 , wherein the first interlayer substance contains one or more first interlayer substances at least one selected from the group consisting of; metal chlorides, metal fluorides, alkali metals, alkali earth metals, halogens, and interhalogen compounds.
11. The structure according to claim 1 ,
wherein the substrate includes aluminum oxide or titanium oxide.
12. The structure according to claim 1 , wherein the metal part includes a metal or alloy containing Fe, Ta, or Mo.
13. The structure according to claim 1 , wherein a width of the metal part is between 1 nm and 20 nm.
14. The wiring according to claim 1 , wherein the metal part, the first insulative film and the second insulative film are in direct contact with the substrate.
15. The wiring according to claim 1 , wherein
a height of the first insulative film from the substrate is larger than a height of the metal part from the substrate, and
a height of the second insulative film from the substrate is larger than a height of the metal part from the substrate.