Magnetoresistive element
View Patent ↗A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
1. A magnetoresistive element comprising:
a first magnetic layer which comprises a first surface and a second surface;
a second magnetic layer;
a tunnel barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer; and
a nonmagnetic cap layer which is a single layer, wherein the nonmagnetic cap layer contacts the second surface of the first magnetic layer and is formed of an alloy comprising a first metal material and a second metal material,
wherein
the first metal material comprises at least one element selected from the group consisting of Ti, Mn, Zn, Zr, Hf and Ta, and
the second metal material comprises at least one element selected from the group consisting of Mo, Ru, Ag, Re and Os.
2. The magnetic element according to claim 1 , wherein
the first magnetic layer has a first standard electrode potential,
the nonmagnetic cap layer is formed from an alloy comprising a first metal material and a second metal material,
wherein
the first metal material has a second standard electrode potential lower than the first standard electrode potential, and
the second metal material has a third standard electrode potential higher than the first standard electrode potential.
3. The magnetic element according to claim 2 , wherein a fourth standard electrode potential of the nonmagnetic cap layer is not less than −0.2 V with respect to the first standard electrode potential and is not more than +0.8 V with respect to the first standard electrode potential.
4. The element according to claim 3 , wherein the fourth standard electrode potential is calculated from a weighted average of the second standard electrode potential and the third standard electrode potential.
5. A magnetic random access memory comprising the magnetoresistive element according to claim 1 , a writing circuit for writing data to the magnetoresistive element, and a reading circuit for reading data from the magnetoresistive element.