Magnetoresistive effect element, magnetic memory
View Patent ↗According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
1. A magnetoresistive effect element comprising:
a first magnetic layer comprising perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer comprising a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe;
a second magnetic layer comprising perpendicular magnetic anisotropy to the film surface and a variable magnetization direction; and
a nonmagnetic layer between the first magnetic layer and the second magnetic layer;
wherein the magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
2. The magnetoresistive effect element of claim 1 , wherein each of the crystals has at least one of a first lattice spacing from 0.12 to 0.16 nm and a second lattice spacing from 0.19 to 0.23 nm in a cross-sectional direction of the magnetic film.
3. The magnetoresistive effect element of claim 1 , wherein each of the crystals includes an element selected from the second group, and
each of the amorphous phases includes an element selected from the first group and an element selected from the second group.
4. The magnetoresistive effect element of claim 1 , wherein when the first magnetic layer includes both of Co and Fe among the elements of the second group, a concentration of Fe is higher than a concentration of Co.
5. The magnetoresistive effect element of claim 1 , wherein the first magnetic layer comprises an interface layer between the magnetic film and the nonmagnetic layer, the interface layer includes an element selected from Co and Fe.
6. The magnetoresistive effect element of claim 5 , wherein a metal film selected from a group including a Ta film, a W film, an Nb film, and an Mo film is inserted in the interface layer.
7. The magnetoresistive effect element of claim 5 , wherein a metal film selected from a group including a Ta film, a W film, an Nb film, and an Mo film is inserted between the magnetic film and the interface layer.
8. The magnetoresistive effect element of claim 1 , wherein an average crystal particle size of the crystals is 3 nm or less.
9. The magnetoresistive effect element of claim 1 , further comprising:
an underlayer that is provided on the second magnetic layer at a side opposite to a side at which the nonmagnetic layer is provided, wherein the underlayer has an atom close-packed plane.
10. The magnetoresistive effect element of claim 1 , further comprising:
a third magnetic layer that is provided at a side opposite to a side of the nonmagnetic layer of the first magnetic layer, wherein the third magnetic layer has perpendicular magnetic anisotropy to the film surface,
wherein a magnetization direction of the third magnetic layer is invariable, and a direction of the third magnetic layer is opposite to the magnetization direction of the first magnetic layer.
11. A magnetic memory comprising:
a memory cell comprising the magnetoresistive effect element of claim 1 .
12. A magnetoresistive effect element comprising:
a first magnetic layer comprising perpendicular magnetic anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer comprising a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, an interface layer between the magnetic film and a nonmagnetic layer, and an intermediate film in the interface layer and selected from a third group including a Ta film, a W film, an Nb film, and an Mo film;
a second magnetic layer comprising perpendicular magnetic anisotropy to the film surface and a variable magnetization direction; and
a nonmagnetic layer between the first magnetic layer and the second magnetic layer.
13. The magnetoresistive effect element of claim 12 , wherein the interface layer includes an element selected from Co and Fe.
14. A magnetic memory comprising:
a memory cell comprising the magnetoresistive effect element of claim 12 .