Magnetoresistive element
View Patent ↗A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
1. A magnetoresistive element comprising:
a first fixed layer having a direction of magnetization fixed;
a recording layer having a direction of magnetization set variable; and
a first non-magnetic layer interposed between the first fixed layer and the recording layer,
wherein:
the recording layer includes a long portion extending in a first direction, a first projecting portion projecting from a central portion of a side of the long portion in a second direction perpendicular to the first direction, and a second projecting portion projecting from a central portion of another side of the long portion in the second direction;
a planar shape of the recording layer is a cross shape;
a planar shape of the long portion is a parallelogram;
the ratio of a first length to a second length falls within a range of 1.5 to 2.2 where the first length is a maximum length of the recording layer in the first direction, and the second length is a maximum length of the recording layer in the second direction;
the recording layer has a film thickness of 5 nm to 20 nm; and
Hsw/Hc≦0.41, where Hsw is a write magnetic field necessary for reverse of magnetization at an intersection of a line which is tilted by 45 from coordinate axes and passes an origin, and an asteroid curve, and Hc is a write magnetic field necessary for reverse of magnetization by a magnetic field only along an axis of easy magnetization.
2. The magnetoresistive element according to claim 1 , wherein the first direction is the axis of easy magnetization, and the second direction is an axis of hard magnetization.
3. The magnetoresistive element according to claim 1 , wherein the ratio of the first length to the second length falls within a range of 1.8 to 2.0.
4. The magnetoresistive element according to claim 1 , wherein the first and second projecting portions are positioned symmetrical with respect to the long portion.
5. The magnetoresistive element according to claim 1 , wherein opposite corners of the long portion are cut.
6. The magnetoresistive element according to claim 1 , wherein the long portion and the first and second projecting portions have rounded corners.
7. The magnetoresistive element according to claim 1 , further comprising:
a second fixed layer having a direction of magnetization fixed; and
a second non-magnetic layer interposed between the second fixed layer and the recording layer.
8. The magnetoresistive element according to claim 1 , wherein at least one of the first fixed layer and the recording layer includes a first ferromagnetic layer, a second ferromagnetic layer, and a third non-magnetic layer held between the first and second ferromagnetic layers.
9. The magnetoresistive element according to claim 1 , wherein at least one of the first fixed layer and the recording layer is formed of a plurality of ferromagnetic layers.
10. The magnetoresistive element according to claim 1 , wherein only the planar shape of the recording layer is the cross shape, and the first fixed layer and the first non-magnetic layer have a rectangular planar shape.
11. A magnetic recording apparatus comprising:
a memory cell including a magnetoresistive element,
the magnetoresistive element including:
a first fixed layer having a direction of magnetization fixed;
a recording layer having a direction of magnetization set variable; and
a first non-magnetic layer interposed between the first fixed layer and the recording layer,
wherein:
the recording layer includes an long portion extending in a first direction, a first projecting portion projecting from a central portion of a side of the long portion in a second direction perpendicular to the first direction, and a second projecting portion projecting from a central portion of another side of the long portion in the second direction;
a planar shape of the recording layer is a cross shape;
a planar shape of the long portion is a parallelogram;
the ratio of a first length to a second length falls within a range of 1.5 to 2.2 where the first length is a maximum length of the recording layer in the first
direction, and the second length is a maximum length of the recording layer in the second direction;
the recording layer has a film thickness of 5 nm to 20 nm; and
Hsw/Hc≦0.41, where Hsw is a write magnetic field necessary for reverse of magnetization at an intersection of a line which is tilted by 45 from coordinate axes and passes an origin, and an asteroid curve, and Hc is a write magnetic field necessary for reverse of magnetization by a magnetic field only along an axis of easy magnetization.
12. The magnetic recording apparatus according to claim 11 , wherein the memory cell further includes a bit line or a word line connected to an end of the magnetoresistive element, and a switching element connected to another end of the magnetoresistive element.
13. The magnetic recording apparatus according to claim 11 , wherein the memory cell further includes a bit line connected to an end of the magnetoresistive element, and a word line connected to another end of the magnetoresistive element.
14. The magnetic recording apparatus according to claim 11 , wherein the memory cell further includes first and second interconnects which hold the magnetoresistive element therebetween, and the axis of easy magnetization of the magnetoresistive element is inclined by 30° to 60° with respect to a direction in which the first or second interconnects extend.
15. The magnetic recording apparatus according to claim 12 , wherein the memory cell further includes a word line electrically isolated from the magnetoresistive element and used to supply a write current for recording information on the magnetoresistive element.