Magnetoresistive element and magnetic memory using the same
According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
1. A magnetoresistive element comprising:
a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;
a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction;
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
a third magnetic layer formed on a surface of the first magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed, the third magnetic layer comprising a magnetization direction antiparallel to the magnetization direction of the first magnetic layer:
a fourth magnetic layer formed on a surface of the second magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed, the fourth magnetic layer comprising a magnetization direction antiparallel to the magnetization direction of the first magnetic layer:
a second nonmagnetic layer located between the first magnetic layer and the third magnetic layer; and
a third nonmagnetic layer located between the second magnetic layer and the fourth magnetic layer,
wherein the thickness of the fourth magnetic layer is smaller than the thickness of the third magnetic layer, and
the third magnetic layer and the fourth magnetic layer are made of the same material.
2. The magnetoresistive element according to claim 1 , wherein
the second nonmagnetic layer and the third nonmagnetic layer comprise a metal including at least one of molybdenum (Mo), niobium (Nb), tantalum (Ta), tungsten (W), iridium (Ir), rhodium (Rh), osmium (Os), rhenium (Re), and ruthenium (Ru).
3. The magnetoresistive element according to claim 1 , wherein
the first magnetic layer and the second magnetic layer comprise an ordered alloy which includes at least one of iron (Fe), cobalt (Co), nickel (Ni), and manganese (Mn) and at least one of platinum (Pt), palladium (Pd), rhodium (Rh), and aluminum (Al) and which has an L1 0 crystal structure.
4. The magnetoresistive element according to claim 1 , wherein
at least one of the first, second, third, and fourth magnetic layers comprises a disordered alloy which includes cobalt (Co) as the main component and which includes at least one of chromium (Cr), tantalum (Ta), niobium (Nb), vanadium (V), tungsten (W), hafnium (Hf), titanium (Ti), zirconium (Zr), platinum (Pt), palladium (Pd), iron (Fe), and nickel (Ni).
5. The magnetoresistive element according to claim 1 , wherein
at least one of the first, second, third, and fourth magnetic layers comprises a stack film alternately having an alloy which includes at least one of iron (Fe), cobalt (Co), and nickel (Ni) and an alloy which includes at least one of chromium (Cr), platinum (Pt), palladium (Pd), iridium (Ir), rhodium (Rh), ruthenium (Ru), osmium (Os), rhenium (Re), gold (Au), and copper (Cu).
6. The magnetoresistive element according to claim 1 , wherein
at least one of the first, second, third, and fourth magnetic layers comprises an alloy of a heavy rare earth metal and a transition metal.
7. The magnetoresistive element according to claim 1 , wherein
the first nonmagnetic layer comprises one of magnesium oxide and aluminum oxide.
8. The magnetoresistive element according to claim 1 , wherein
the first nonmagnetic layer comprises at least one of copper (Cu), gold (Au), and silver (Ag).
9. The magnetoresistive element according to claim 1 , wherein
the thickness of the fourth magnetic layer is 3.5 nm or more, and the thickness of the third magnetic layer is 10 nm or less.
10. A magnetic memory according to claim 1 , comprising:
a memory cell including the magnetoresistive element, and
first and second electrodes applying electricity to the magnetoresistive element.
11. The magnetic memory according to claim 10 , further comprising:
a first interconnect electrically connected to the first electrode;
a second interconnect electrically connected to the second electrode; and
a write circuit which is electrically connected to the first interconnect and the second interconnect and which bi-directionally supplies a current to the magnetoresistive element.
12. The magnetic memory according to claim 10 , further comprising:
a select transistor connected between the second electrode of the magnetoresistive element and the second interconnect; and
a third interconnect which controls the on/off of the select transistor.
13. The magnetoresistive element according to claim 1 , wherein
the first nonmagnetic layer is a tunnel barrier layer.
14. The magnetoresistive element according to claim 1 , wherein
a change in magnetoresistance through the first nonmagnetic layer is larger than a change in magnetoresistance through one of the second and third nonmagnetic layers.