Semiconductor memory
View Patent ↗A semiconductor memory includes a first block array including first to n-th blocks (n is a natural number of 2 or more) arranged in a first direction, each of the first to n-th blocks including a first memory cell, a first conductive line extending in the first direction, and shared by the first to n-th blocks, first to n-th current amplifiers corresponding to the first to n-th blocks, the i-th current amplifier (i is one of 1 to n) including an input terminal and an output terminal, the input terminal of the i-th current amplifier being electrically connected to the first memory cell in the i-th block, the output terminal of the i-th current amplifier being electrically connected to the first conductive line, and a sense amplifier electrically connected to the first conductive line.
1. A semiconductor memory comprising:
a first block array including first to n-th blocks (n is a natural number of 2 or more) arranged in a first direction, each of the first to n-th blocks including a first memory cell;
a first conductive line extending in the first direction, and shared by the first to n-th blocks;
first to n-th current amplifiers corresponding to the first to n-th blocks, the i-th current amplifier (i is one of 1 to n) including an input terminal and an output terminal, the input terminal of the i-th current amplifier being electrically connected to the first memory cell in the i-th block, the output terminal of the i-th current amplifier being electrically connected to the first conductive line; and
a sense amplifier electrically connected to the first conductive line.
2. The memory of claim 1 , further comprising:
first to n-th driver pairs corresponding to the first to n-th blocks, and driven by a first potential and a second potential smaller than the first potential,
the first memory cell in the i-th block is connected between the i-th driver pair in a writing, and the i-th driver pair generates a current having a current direction corresponding to data written to the first memory cell in the i-th block.
3. The memory of claim 2 , wherein
the first to n-th current amplifiers are driven by a third potential smaller than the first potential, the first memory cell in the i-th block is connected between one of drivers in the i-th driver pair and the i-th current amplifier in a reading, and the one of the drivers in the i-th driver pair outputs one of the first and second potentials.
4. The memory of claim 3 , wherein
the other of the drivers in the i-th driver pair is inactive in the reading.
5. The memory of claim 3 , wherein
the one of the drivers in the i-th driver pair outputs the first potential and a current flows from the sense amplifier toward the i-th current amplifier, in the reading.
6. The memory of claim 3 , wherein
the one of the drivers in the i-th driver pair outputs the second potential and a current flows from the i-th current amplifier toward the sense amplifier, in the reading.
7. The memory of claim 2 , further comprising:
a control circuit disposed out of the first block array, and controlling operations of the first to n-th driver pairs.
8. The memory of claim 1 , wherein
the first memory cell includes a resistance change element.
9. The memory of claim 1 , wherein
the first memory cell includes a magnetoresistive element.
10. The memory of claim 1 , further comprising:
a second conductive line extending in the first direction, and shared by the first to n-th blocks; and
(n+1)-th to 2n-th current amplifiers corresponding to the first to n-th blocks, each of the first to n-th blocks including a reference cell, the j-th current amplifier (j is one of n+1 to 2n) including an input terminal and an output terminal, the input terminal of the j-th current amplifier being electrically connected to the reference cell in the j-th block, the output terminal of the j-th current amplifier being electrically connected to the second conductive line, the sense amplifier being electrically connected to the second conductive line.
11. The memory of claim 10 , wherein
load capacities of the first and second conductive lines are substantially equal.
12. The memory of claim 1 , further comprising:
a second conductive line extending in the first direction, and shared by the first to n-th blocks; and
(n+1)-th to 2n-th current amplifiers corresponding to the first to n-th blocks, each of the first to n-th blocks including a second memory cell, the j-th current amplifier (j is one of n+1 to 2n) including an input terminal and an output terminal, the input terminal of the j-th current amplifier being electrically connected to the second memory cell in the j-th block, the output terminal of the j-th current amplifier being electrically connected to the second conductive line, the sense amplifier being electrically connected to the second conductive line.
13. The memory of claim 12 , wherein
load capacities of the first and second conductive lines are substantially equal.
14. The memory of claim 1 , further comprising:
a second block array including (n+1)-th to 2n-th blocks arranged in the first direction, each of the (n+1)-th to 2n-th blocks including a second memory cell;
a second conductive line extending in the first direction, and shared by the (n+1)-th to 2n-th blocks; and
(n+1)-th to 2n-th current amplifiers corresponding to the (n+1)-th to 2n-th blocks, the j-th current amplifier (j is one of n+1 to 2n) including an input terminal and an output terminal, the input terminal of the j-th current amplifier being electrically connected to the second memory cell in the j-th block, the output terminal of the j-th current amplifier being electrically connected to the second conductive line, the sense amplifier being electrically connected to the second conductive line.
15. The memory of claim 14 , wherein
load capacities of the first and second conductive lines are substantially equal.
16. The memory of claim 1 , wherein
the sense amplifier is connected to one end of the first conductive line.